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FCI25N60N-F102

FCI25N60N-F102
Mfr. #:
FCI25N60N-F102
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 600V 25A I2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCI25N60N-F102 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FCI25N, FCI25, FCI2, FCI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK
***et Europe
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Rail
***i-Key
MOSFET N-CH 600V 25A I2PAK
***ark
MOSFET, N CH, 600V, 25A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 25A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
FCI25N60N-F102
DISTI # V36:1790_06359340		ON SemiconductorSUPREMOS, 25A IN I2PAK, _F1020
  • 1000000:$2.3100
  • 500000:$2.3130
  • 100000:$2.4790
  • 10000:$2.7570
  • 1000:$2.8020
FCI25N60N-F102
DISTI # FCI25N60N-F102-ND		ON SemiconductorMOSFET N-CH 600V 25A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$2.8021
FCI25N60N_F102
DISTI # FCI25N60N-F102		ON SemiconductorTrans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Rail - Rail/Tube (Alt: FCI25N60N-F102)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$2.2900
  • 1000:$2.3900
  • 2000:$2.3900
  • 4000:$2.3900
  • 6000:$2.3900
FCI25N60N_F102
DISTI # FCI25N60N-F102		ON SemiconductorTrans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Rail - Bulk (Alt: FCI25N60N-F102)
Min Qty: 111
Container: Bulk		Americas - 0
  • 1110:$2.6900
  • 333:$2.7900
  • 555:$2.7900
  • 111:$2.8900
  • 222:$2.8900
FCI25N60N-F102
DISTI # 48AC0851		ON SemiconductorSM 600V 125MOHM F I2PAK / TUBE0
  • 500:$2.6500
  • 250:$2.7300
  • 100:$3.2600
  • 50:$3.7700
  • 25:$4.0100
  • 10:$4.5800
  • 1:$5.2900
FCI25N60N-F102
DISTI # 512-FCI25N60N_F102		ON SemiconductorMOSFET 600V N-CHAN SupreMOS
RoHS: Compliant		1081
  • 1:$5.0400
  • 10:$4.2800
  • 100:$3.7100
  • 250:$3.5200
  • 500:$3.1600
  • 1000:$2.6600
  • 2000:$2.5300
FCI25N60N-F102Fairchild Semiconductor Corporation 
RoHS: Not Compliant		787
  • 1000:$2.7900
  • 500:$2.9400
  • 100:$3.0600
  • 25:$3.1900
  • 1:$3.4300
Bild Teil # Beschreibung
FCI25N60N-F102

Mfr.#: FCI25N60N-F102

OMO.#: OMO-FCI25N60N-F102

 MOSFET 600V N-CHAN SupreMOS
FCI25N60N_F102

Mfr.#: FCI25N60N_F102

OMO.#: OMO-FCI25N60N-F102-126

 IGBT Transistors MOSFET 600V N-CHAN SupreMOS
FCI25N60N

Mfr.#: FCI25N60N

OMO.#: OMO-FCI25N60N-ON-SEMICONDUCTOR

 MOSFET N-CH 600V 25A I2PAK
FCI25N60N-F102

Mfr.#: FCI25N60N-F102

OMO.#: OMO-FCI25N60N-F102-ON-SEMICONDUCTOR

 MOSFET N-CH 600V 25A I2PAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von FCI25N60N-F102 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,46 $
3,46 $
10
3,29 $
32,92 $
100
3,12 $
311,85 $
500
2,95 $
1 472,65 $
1000
2,77 $
2 772,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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