 |  | | |
| PartNumber | FCI25N60N-F102 | FCI25N60N_F102 | FCI25N60N |
| Description | MOSFET 600V N-CHAN SupreMOS | IGBT Transistors MOSFET 600V N-CHAN SupreMOS | MOSFET N-CH 600V 25A I2PAK |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | FAIRCHILD |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 107 mOhms | - | - |
| Pd Power Dissipation | 216 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | Tube | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Series | FCI25N60N | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | FCI25N60N_F102 | - | - |
| Unit Weight | 0.073511 oz | 0.073511 oz | - |
| Package Case | - | I2PAK-3 | - |
| Pd Power Dissipation | - | 216 W | - |
| Id Continuous Drain Current | - | 25 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 107 mOhms | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCI25N60N-F102 | MOSFET 600V N-CHAN SupreMOS | |
| FCI25N60N_F102 | IGBT Transistors MOSFET 600V N-CHAN SupreMOS | ||
ON Semiconductor |
FCI25N60N | MOSFET N-CH 600V 25A I2PAK | |
| FCI25N60N-F102 | MOSFET N-CH 600V 25A I2PAK |