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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP171PE6327T DISTI # BSP171PE6327XTINTR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.9A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP171PE6327T DISTI # BSP171PE6327XTINCT-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.9A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP171P H6327 OMO.#: OMO-BSP171P-H6327 |
MOSFET P-Ch -60V 1.9A SOT-223-3 |
|
|
Mfr.#: BSP171PH6327XTSA1 OMO.#: OMO-BSP171PH6327XTSA1 |
MOSFET P-Ch -60V 1.9A SOT-223-3 |
|
Mfr.#: BSP171P OMO.#: OMO-BSP171P-1190 |
P CH MOSFET, -60V, 1.45A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.45A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.4ohm, Rds(on) Test Voltage Vgs:-10V, T |
|
|
Mfr.#: BSP171P L6327 OMO.#: OMO-BSP171P-L6327-1190 |
MOSFET P-Ch -60V 1.9A SOT-223-3 |
|
Mfr.#: BSP171PH6327XTSA1 |
MOSFET P-CH 60V 1.9A SOT223 |
|
|
Mfr.#: BSP171PL6327 OMO.#: OMO-BSP171PL6327-1190 |
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP171PL6327HTSA1 |
MOSFET P-CH 60V 1.9A SOT-223 |
|
|
Mfr.#: BSP171E6919 OMO.#: OMO-BSP171E6919-1190 |
Neu und Original |
|
|
Mfr.#: BSP171PH6327XTSA1-CUT TAPE |
Neu und Original |
|
|
Mfr.#: BSP171PE6327T |
MOSFET P-CH 60V 1.9A SOT223 |
