 |  | | |
| PartNumber | BSP170P H6327 | BSP170PE6327T | BSP170PE6327 |
| Description | MOSFET P-Ch -60V -1.9A SOT-223-3 | MOSFET P-CH 60V 1.9A SOT223 | MOSFET P-CH 60V 1.9A SOT223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.9 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | - 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP170 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 1.3 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 28 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 92 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | BSP170PH6327XTSA1 SP001058608 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP171P H6327 | MOSFET P-Ch -60V 1.9A SOT-223-3 | |
| BSP171PH6327XTSA1 | MOSFET P-Ch -60V 1.9A SOT-223-3 | ||
| BSP170P H6327 | MOSFET P-Ch -60V -1.9A SOT-223-3 | ||
| BSP170PH6327XTSA1 | MOSFET P-Ch -60V -1.9A SOT-223-3 | ||
| BSP179H6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSP170PE6327T | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP170PH6327XTSA1 | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP170PL6327HTSA1 | MOSFET P-CH 60V 1.9A SOT-223 | ||
| BSP171PE6327 | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP171PH6327XTSA1 | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP171PL6327HTSA1 | MOSFET P-CH 60V 1.9A SOT-223 | ||
| BSP179H6327XTSA1 | MOSFET N-CH 400V 0.21A SOT-223 | ||
| BSP170PE6327 | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP171PE6327T | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP17 | INSTOCK | ||
| BSP170 | Neu und Original | ||
| BSP170P | Neu und Original | ||
| BSP170P H6327 | Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP170PH6327 | -60V,-1.9A,P-Ch Small-Signal MOSFET | ||
| BSP170PL6327 | Neu und Original | ||
| BSP170PL6327INCT | Neu und Original | ||
| BSP171 | Neu und Original | ||
| BSP171 E6327 | Neu und Original | ||
| BSP171E | Neu und Original | ||
| BSP171P | P CH MOSFET, -60V, 1.45A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.45A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.4ohm, Rds(on) Test Voltage Vgs:-10V, T | ||
| BSP171P E6327 | Neu und Original | ||
| BSP171P E6327 , TEA1751T | Neu und Original | ||
| BSP171P E6919 | Neu und Original | ||
| BSP171P H6327 | Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP171P L6327 | MOSFET P-Ch -60V 1.9A SOT-223-3 | ||
| BSP171PH6327 | -60V,-1.9A P-Channel Power MOSFET | ||
| BSP171PL | Neu und Original | ||
| BSP171PL6327 | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP171PL6327XT | Neu und Original | ||
| BSP171 E6919 | Neu und Original | ||
| BSP171E6919 | Neu und Original | ||
| BSP170PH6327XTSA1-CUT TAPE | Neu und Original | ||
| BSP171PH6327XTSA1-CUT TAPE | Neu und Original |