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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP171E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 1000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP171P H6327 OMO.#: OMO-BSP171P-H6327 |
MOSFET P-Ch -60V 1.9A SOT-223-3 |
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Mfr.#: BSP171E OMO.#: OMO-BSP171E-1190 |
Neu und Original |
|
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Mfr.#: BSP171P OMO.#: OMO-BSP171P-1190 |
P CH MOSFET, -60V, 1.45A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.45A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.4ohm, Rds(on) Test Voltage Vgs:-10V, T |
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Mfr.#: BSP171P E6327 , TEA1751T |
Neu und Original |
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Mfr.#: BSP171PE6327 |
MOSFET P-CH 60V 1.9A SOT223 |
|
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Mfr.#: BSP171PH6327XTSA1 |
MOSFET P-CH 60V 1.9A SOT223 |
|
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Mfr.#: BSP171PL OMO.#: OMO-BSP171PL-1190 |
Neu und Original |
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Mfr.#: BSP171 E6919 OMO.#: OMO-BSP171-E6919-1190 |
Neu und Original |
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Mfr.#: BSP171PH6327XTSA1-CUT TAPE |
Neu und Original |
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Mfr.#: BSP171PE6327T |
MOSFET P-CH 60V 1.9A SOT223 |