MRF6V2300NR1

Mfr. #:: MRF6V2300NR1
Hersteller:: NXP Semiconductors
Beschreibung:: RF MOSFET Transistors VHV6 300W TO270WB4N
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF6V2300NR1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: MRF6V2300NR1 Mehr Informationen MRF6V2300NR1 Product Details

Produkteigenschaft
Attributwert

Hersteller

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Serie: MRF6V2300N

Typ: HF-Leistungs-MOSFET

Verpackung: Spule

Gewichtseinheit: 0.058073 oz

Montageart: SMD/SMT

Paket-Koffer: TO-270 WB EP

Technologie: Si

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 65 C

Vgs-Gate-Source-Spannung: - 0.5 V 10 V

Vds-Drain-Source-Breakdown-Voltage: 110 V

Transistor-Polarität: N-Kanal

Tags: MRF6V23, MRF6V2, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V2300NR1 Beschreibung

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***et: Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

***W: RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736

*** Semiconductors SCT: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F

*** Stop Electro: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270

***nell: RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735

*** Semiconductors SCT: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF6V2300NR1 DISTI # MRF6V2300NR1TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-270-4 RoHS: Not compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call
MRF6V2300NR1 DISTI # MRF6V2300NR1CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-270-4 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
MRF6V2300NR1 DISTI # MRF6V2300NR1DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-270-4 RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MRF6V2300NR1 DISTI # 47M2190	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:300W,Operating Frequency Min:10MHz,Operating Frequency Max:600MHz,RF Transistor Case:TO-270 RoHS Compliant: Yes	0	1:$138.9300 10:$133.4300 25:$125.5800 100:$81.6300 500:$78.4900
MRF6V2300NR1 DISTI # 841-MRF6V2300NR1	NXP Semiconductors	RF MOSFET Transistors VHV6 300W TO270WB4N RoHS: Compliant	0
MRF6V2300NR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 RoHS: Compliant	972	1000:$93.9000 500:$98.8400 100:$102.9000 25:$107.3100 1:$115.5600
MRF6V2300NR1 DISTI # MRF6V2300NR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MRF6V2010GNR1 OMO.#: OMO-MRF6V2010GNR1	RF MOSFET Transistors VHV6 10W TO270-2GN
	Mfr.#: MRF6V2150NBR1 OMO.#: OMO-MRF6V2150NBR1	RF MOSFET Transistors VHV6 150W
	Mfr.#: MRF6V2300NBR1 OMO.#: OMO-MRF6V2300NBR1	RF MOSFET Transistors VHV6 300W TO272WB4N
	Mfr.#: MRF6V2010NBR5 OMO.#: OMO-MRF6V2010NBR5	RF MOSFET Transistors VHV6 10W Latrl N-Ch. Broadband MOSFET
	Mfr.#: MRF6V2010GNR5 OMO.#: OMO-MRF6V2010GNR5-NXP-SEMICONDUCTORS	FET RF 110V 220MHZ TO-270G-2
	Mfr.#: MRF6V2010NBR1 OMO.#: OMO-MRF6V2010NBR1-NXP-SEMICONDUCTORS	FET RF 110V 220MHZ TO272-2
	Mfr.#: MRF6V2010NBR5 OMO.#: OMO-MRF6V2010NBR5-NXP-SEMICONDUCTORS	FET RF 110V 220MHZ TO-272-2
	Mfr.#: MRF6V2150NBR OMO.#: OMO-MRF6V2150NBR-1190	Neu und Original
	Mfr.#: MRF6V2010GNR1 OMO.#: OMO-MRF6V2010GNR1-NXP-SEMICONDUCTORS	FET RF 110V 220MHZ TO-270G-2
	Mfr.#: MRF6V2150NBR5 OMO.#: OMO-MRF6V2150NBR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von MRF6V2300NR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~117,74 $~~; ~~117,74 $~~

10: ~~111,85 $~~; ~~1 118,48 $~~

100: ~~105,96 $~~; ~~10 596,15 $~~

500: ~~100,07 $~~; ~~50 037,40 $~~

1000: ~~94,19 $~~; ~~94 188,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

MRF6V23 5
MRF6V2 17
MRF6V 92
MRF6 332
MRF 2307

MRF6V2300NR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes