NTMS4935NR2G

Mfr. #:: NTMS4935NR2G
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 30V 10A 8SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: NTMS4935NR2G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTMS4935NR2G Datasheet NTMS4935NR2G Datasheet (P4-P5)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: AN

Produktkategorie: FETs - Einzeln

Tags: NTMS493, NTMS49, NTMS4, NTMS, NTM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMS4935NR2G Beschreibung

***emi: Power MOSFET 30V 16A 5.1 mOhm Single N-Channel SO-8

***th Star Micro: Power MOSFET N Channel Single 30V 126A SOIC8

***r Electronics: Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Power MOSFET 30V 29A 5.25 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 24A 30V 4.0MOH

***ponent Stockers USA: 11000 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):5.25mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

*** Source Electronics: MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

***ure Electronics: SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8

***ment14 APAC: MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V

***emi: Power MOSFET 30V 11.7A 12 mOhm Dual N-Channel SO-8 with Schottky Diode

***et: Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R

***ark: N CHANNEL MOSFET, 30V, 8.9A, SOIC, FULL REEL

***r Electronics: Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ical: Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***nell: MOSFET, P; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:30V; Current, Id Cont:13A; On State Resistance:7.2mohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.7V; Case Style:SOIC; Termination Type:SMD; Transistor Case Style:SOIC

***rchild Semiconductor: This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***enic: 30V 11.4A 2.5W 24m´Î@10V9.1A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***el Electronic: MICROCHIP - 24AA025E48-I/SN - EEPROM, einzigartige EUI-48™-Node-Adresse, 2 Kbit, 2 Blöcke (128 x 8 Bit), Seriell I2C (2-Draht)

***ark: P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***ark: Mosfet Transistor, P Channel, -10 A, -30 V, 20 Mohm, 10 V, -1 V

***itex: Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8

***ure Electronics: Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***C: Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P, -30V, -10A, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power D

***ment14 APAC: MOSFET, P, 30V, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Pulse Current Idm:45A; Row Pitch:6.3mm; SMD Marking:F7416; Termination Type:Surface Mount Device; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
NTMS4935NR2G DISTI # NTMS4935NR2G-ND	ON Semiconductor	MOSFET N-CH 30V 10A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NTMS4935NR2G DISTI # 863-NTMS4935NR2G	ON Semiconductor	MOSFET Power MOSFET 30V 126A 5.1 mOhm Single RoHS: Compliant	0
NTMS4935NR2G	ON Semiconductor	RoHS: Not Compliant	198360	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: NTMS4937NR2G OMO.#: OMO-NTMS4937NR2G	MOSFET Power MOSFET 30V 112A 6.5 mOhm Single
	Mfr.#: NTMS4939NR2G OMO.#: OMO-NTMS4939NR2G	MOSFET Power MOSFET 30V 100A 8.4 mOhm Single
	Mfr.#: NTMS4916NR2G OMO.#: OMO-NTMS4916NR2G-ON-SEMICONDUCTOR	MOSFET N-CH 30V 11.4A SO8FL
	Mfr.#: NTMS4916UT001 OMO.#: OMO-NTMS4916UT001-1190	Neu und Original
	Mfr.#: NTMS4917NR2G OMO.#: OMO-NTMS4917NR2G-ON-SEMICONDUCTOR	MOSFET N-CH 30V 10.2A SO8FL
	Mfr.#: NTMS4917UT001 OMO.#: OMO-NTMS4917UT001-1190	Neu und Original
	Mfr.#: NTMS4920N OMO.#: OMO-NTMS4920N-1190	Neu und Original
	Mfr.#: NTMS4935N OMO.#: OMO-NTMS4935N-1190	Neu und Original
	Mfr.#: NTMS4937NR2G IRF8714TR OMO.#: OMO-NTMS4937NR2G-IRF8714TR-1190	Neu und Original
	Mfr.#: NTMS4937NR2G OMO.#: OMO-NTMS4937NR2G-ON-SEMICONDUCTOR	RF Bipolar Transistors MOSFET Power MOSFET 30V 112A 6.5 mOhm Single

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von NTMS4935NR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,23 $~~; ~~1,23 $~~

10: ~~1,17 $~~; ~~11,68 $~~

100: ~~1,11 $~~; ~~110,70 $~~

500: ~~1,05 $~~; ~~522,75 $~~

1000: ~~0,98 $~~; ~~984,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

NTMS493 6
NTMS49 14
NTMS4 71
NTMS 115
NTM 810

NTMS4935NR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes