PartNumber | NTMS4916NR2G | NTMS4916AS001 | NTMS4916N |
Description | MOSFET NFET SO8 30V 11.4A 9MOHM | ||
Manufacturer | ON Semiconductor | ON | ON |
Product Category | MOSFET | IC Chips | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOIC-8 | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 11.6 A | - | - |
Rds On Drain Source Resistance | 12 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Qg Gate Charge | 15 nC | - | - |
Pd Power Dissipation | 1.3 W | - | - |
Packaging | Reel | - | Reel |
Series | NTMS4916N | - | NTMS4916N |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 23 S | - | - |
Fall Time | 15.6 ns | - | 15.6 ns |
Product Type | MOSFET | - | - |
Rise Time | 7.4 ns | - | 7.4 nS |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.017870 oz | - | 0.017870 oz |
Package Case | - | - | SO-8 |
Pd Power Dissipation | - | - | 1.3 W |
Id Continuous Drain Current | - | - | 11.6 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
Rds On Drain Source Resistance | - | - | 12 mOhms |
Qg Gate Charge | - | - | 15 nC |
Forward Transconductance Min | - | - | 23 S |