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SI7102DN-T1-GE3

SI7102DN-T1-GE3
Mfr. #:
SI7102DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 12V 35A 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7102DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI7102DN-GE3
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR 1212-8
Technologie
Si
Betriebstemperatur
-50°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR 1212-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
52W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
12V
Eingangskapazität-Ciss-Vds
3720pF @ 6V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
35A (Tc)
Rds-On-Max-Id-Vgs
3.8 mOhm @ 15A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
110nC @ 8V
Pd-Verlustleistung
3.8 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 50 C
Abfallzeit
12 ns
Anstiegszeit
125 ns
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
25 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Rds-On-Drain-Source-Widerstand
3.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
53 ns
Typische-Einschaltverzögerungszeit
27 ns
Qg-Gate-Ladung
73 nC
Kanal-Modus
Erweiterung
Tags
SI7102, SI710, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 12 V 0.0038 O 110 nC SMT Power Mosfet - PowerPAK-1206-8
***ark
Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
***nell
MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
SI7102DN-T1-GE3
DISTI # V72:2272_09215602		Vishay IntertechnologiesTrans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		142
  • 100:$1.0144
  • 25:$1.2147
  • 10:$1.2196
  • 1:$1.3855
SI7102DN-T1-GE3
DISTI # SI7102DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 12V 35A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.9059
SI7102DN-T1-GE3
DISTI # SI7102DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 12V 35A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2879In Stock
  • 1000:$1.0021
  • 500:$1.2095
  • 100:$1.5550
  • 10:$1.9350
  • 1:$2.1400
SI7102DN-T1-GE3
DISTI # SI7102DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 12V 35A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SI7102DN-T1-GE3
    DISTI # 29754142    		Vishay IntertechnologiesTrans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant    		3000
    • 3000:$0.9546
    SI7102DN-T1-GE3
    DISTI # 25789860    		Vishay IntertechnologiesTrans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant    		142
    • 100:$1.0144
    • 25:$1.2147
    • 12:$1.2196
    SI7102DN-T1-GE3
    DISTI # SI7102DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SI7102DN-T1-GE3
      DISTI # SI7102DN-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 3000:€1.5179
      • 6000:€1.0639
      • 12000:€0.8769
      • 18000:€0.7789
      • 30000:€0.7369
      SI7102DN-T1-GE3
      DISTI # 05W6953      		Vishay IntertechnologiesMOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:12V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
      • 1:$1.9000
      • 25:$1.5800
      • 50:$1.4000
      • 100:$1.2200
      • 250:$1.1500
      • 500:$1.0700
      • 1000:$1.0200
      SI7102DN-T1-GE3.
      DISTI # 28AC2159      		Vishay IntertechnologiesN-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: YES0
        SI7102DN-T1-GE3
        DISTI # 781-SI7102DN-T1-GE3        		Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK 1212-8
        RoHS: Compliant        		2110
        • 1:$1.9000
        • 10:$1.5800
        • 100:$1.2200
        • 500:$1.0700
        • 1000:$1.0200
        SI7102DN-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK 1212-8
        RoHS: Compliant        		Americas - 18000
          SI7102DN-T1-GE3
          DISTI # 2335346          		Vishay IntertechnologiesMOSFET, N CH, 12V, 35A, POWERPAK 1212
          RoHS: Compliant          		287
          • 1:$3.0100
          • 10:$2.5000
          • 100:$1.9400
          • 500:$1.7000
          • 1000:$1.6200
          • 3000:$1.6200
          SI7102DN-T1-GE3
          DISTI # 2335346          		Vishay IntertechnologiesMOSFET, N CH, 12V, 35A, POWERPAK 1212
          RoHS: Compliant          		297
          • 5:£1.2900
          • 25:£1.1800
          • 100:£0.9090
          • 250:£0.8530
          • 500:£0.7970
          SI7102DN-T1-GE3
          DISTI # C1S803601025928          		Vishay IntertechnologiesTrans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R
          RoHS: Compliant          		142
          • 100:$1.0144
          • 25:$1.2147
          • 10:$1.2196
          Bild Teil # Beschreibung
          SI7102DN-T1-E3

          Mfr.#: SI7102DN-T1-E3

          OMO.#: OMO-SI7102DN-T1-E3

          		 MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
          SI7102DN-T1-GE3

          Mfr.#: SI7102DN-T1-GE3

          OMO.#: OMO-SI7102DN-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
          SI7102DN

          Mfr.#: SI7102DN

          OMO.#: OMO-SI7102DN-1190

          		 Neu und Original
          SI7102DN-T1-E3

          Mfr.#: SI7102DN-T1-E3

          OMO.#: OMO-SI7102DN-T1-E3-VISHAY

          		 MOSFET N-CH 12V 35A PPAK 1212-8
          SI7102DN-T1-GE3

          Mfr.#: SI7102DN-T1-GE3

          OMO.#: OMO-SI7102DN-T1-GE3-VISHAY

          		 MOSFET N-CH 12V 35A 1212-8
          SI7102DNTE1GE3

          Mfr.#: SI7102DNTE1GE3

          OMO.#: OMO-SI7102DNTE1GE3-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von SI7102DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,83 $
          0,83 $
          10
          0,79 $
          7,91 $
          100
          0,75 $
          74,91 $
          500
          0,71 $
          353,75 $
          1000
          0,67 $
          665,90 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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