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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| 2SK3606-01 DISTI # 70212479 | Fuji Electric Co Ltd | MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 131 Milliohms,ID +/-18A,TO-220AB,PD 105W RoHS: Compliant | 0 |
|
| 2SK360IGETL-E | Renesas Electronics Corporation | 1186 | ||
| 2SK360IGD | Hitachi Ltd | 30 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, FET | 2900 |
|
| 2SK360IGETL | Hitachi Ltd | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET | 414 | |
| 2SK3602-01 DISTI # FE0000000000491 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 23A I(D), 150V,0.105ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3607-01MR DISTI # FE0000000000495 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 13A I(D), 200V,0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3604-01L DISTI # FE0000000000492 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D), 150V,0.105ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3604-01S DISTI # FE0000000000493 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D), 150V,0.105ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3609-01 DISTI # FE0000000000498 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 2.7A I(D), 200V,0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3603-01MR DISTI # FE0000000000067 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
|
| 2SK3600-01L DISTI # FE0000000000489 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D), 100V,0.062ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3600-01S DISTI # FE0000000000490 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D), 100V,0.062ohm, 1-Element, N-Channel, Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3608-01L DISTI # FE0000000000496 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 18A I(D), 200V,0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3606-01 DISTI # FE0000000000494 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 13A I(D), 200V,0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK3608-01S DISTI # FE0000000000497 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 18A I(D), 200V,0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| 2SK360IGETR | Renesas Electronics Corporation | 3544 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: 2SK3078A(TE12L,F) OMO.#: OMO-2SK3078A-TE12L-F- |
RF MOSFET Transistors N-Ch Radio Freq 0.5 3W 10V VDSS |
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Mfr.#: 2SK2677 OMO.#: OMO-2SK2677-1190 |
Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: 2SK3078A OMO.#: OMO-2SK3078A-1190 |
Neu und Original |
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Mfr.#: 2SK3430 OMO.#: OMO-2SK3430-1190 |
Neu und Original |
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Mfr.#: 2SK3799 OMO.#: OMO-2SK3799-1190 |
MOSFET, N, 900V, TO-220SIS, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:900V, On Resistance Rds(on):1.3ohm, Rds(on) Test Voltage Vgs:10V, Threshold Vo |
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Mfr.#: 2SK3878(STA1,E,S) OMO.#: OMO-2SK3878-STA1-E-S--1190 |
Neu und Original |
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Mfr.#: 2SK4078B OMO.#: OMO-2SK4078B-1190 |
Neu und Original |
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Mfr.#: 2SK644 OMO.#: OMO-2SK644-1190 |
Neu und Original |
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Mfr.#: 2SK725A,2SK725 OMO.#: OMO-2SK725A-2SK725-1190 |
Neu und Original |
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Mfr.#: 2SK893,2SK891,K891,K893, |
Neu und Original |