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IPI60R385CP

IPI60R385CP
Mfr. #:
IPI60R385CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Darlington Transistors MOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI60R385CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CoolMOS CP
Verpackung
Rohr
Teil-Aliasnamen
IPI60R385CPXK IPI60R385CPXKSA1 SP000103250
Gewichtseinheit
0.084199 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
I2PAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
83 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
5 ns
Anstiegszeit
5 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
9 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Rds-On-Drain-Source-Widerstand
385 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
10 ns
Kanal-Modus
Erweiterung
Tags
IPI60R3, IPI60R, IPI60, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 0.385 Ohm CoolMOSTM Power Transistor - PG-TO262
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:9A; On State Resistance:0.385ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-262; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 9A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
IPI60R385CPXKSA1
DISTI # IPI60R385CPXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 9A I2PAK
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPI60R385CP
    DISTI # 726-IPI60R385CP    		Infineon Technologies AGMOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP
    RoHS: Compliant    		426
    • 1:$2.3400
    • 10:$1.9900
    • 100:$1.5900
    • 500:$1.3900
    IPI60R385CPXKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPI60R385CPXKSA1Infineon Technologies AGPower Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Compliant      		16041
      • 1000:$0.9600
      • 500:$1.0100
      • 100:$1.0500
      • 25:$1.1000
      • 1:$1.1800
      IPI60R385CPXKSA1
      DISTI # IPI60R385CPXKSA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,9A,83W,PG-TO262-3495
      • 1:$2.3398
      • 3:$2.0130
      • 10:$1.6140
      • 100:$1.3981
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      Mfr.#: IPI60R199CP

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von IPI60R385CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,44 $
      1,44 $
      10
      1,37 $
      13,68 $
      100
      1,30 $
      129,60 $
      500
      1,22 $
      612,00 $
      1000
      1,15 $
      1 152,00 $
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