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IRF3808PBF

IRF3808PBF
Mfr. #:
IRF3808PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 75V 140A 7mOhm 150nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3808PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3808PBF DatasheetIRF3808PBF Datasheet (P4-P6)IRF3808PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
140 A
Rds On - Drain-Source-Widerstand:
7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
150 nC
Pd - Verlustleistung:
330 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001563250
Gewichtseinheit:
0.211644 oz
Tags
IRF3808P, IRF3808, IRF38, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***v
    I***v
    RU

    Checked for 12 volts everything works fine can still order if there are no problems

    2019-03-30
    T***i
    T***i
    US

    I'm very satisfied

    2019-01-22
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de
***ure Electronics
Single N-Channel 75 V 7 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 75V 140A 7mΩ 150°C TO-220 IRF3808PBF
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***el Electronic
Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 75V, 140A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:550A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 169A;TO-220AB;PD 330W;-55de
***ure Electronics
Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
*** electronic
Transistor MOSFET N-Ch. 169A/55V TO220
***roFlash
Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 55V, 133A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:169A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:169A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:5.3mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20
***ure Electronics
Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***eco
MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB
***Yang
Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ment14 APAC
MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***(Formerly Allied Electronics)
MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, 75V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3307; Current Id Max:120A; N-channel Gate Charge:79nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ark
Mosfet Transistor, N Channel, 100 A, 80 V, 3.3 Mohm, 10 V, 3 V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 80V, 100A, TO-220
***nell
MOSFET, N CH, 80V, 100A, TO-220; Transistor Polarity:N-Channel; Current Id Max:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:306W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2010)
***ark
Mosfet Transistor, N Channel, 120 A, 80 V, 0.003 Ohm, 10 V, 3 V
***el Electronic
120A, 80V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
***ponent Stockers USA
120 A 80 V 0.0035 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
IRF3808PBF
DISTI # V99:2348_13890381		Infineon Technologies AGTrans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 1000:$1.0315
  • 500:$1.2377
  • 100:$1.3587
  • 10:$1.6364
  • 1:$1.8508
IRF3808PBF
DISTI # IRF3808PBF-ND		Infineon Technologies AGMOSFET N-CH 75V 140A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1409In Stock
  • 1000:$1.2561
  • 500:$1.5159
  • 100:$1.9491
  • 10:$2.4260
  • 1:$2.6900
IRF3808PBF
DISTI # 30155533		Infineon Technologies AGTrans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		5980
  • 5000:$0.8979
  • 2500:$0.9236
  • 1000:$0.9507
  • 500:$0.9795
  • 250:$1.0102
  • 100:$1.0427
  • 12:$1.0775
IRF3808PBF
DISTI # 30151302		Infineon Technologies AGTrans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1000
  • 1000:$1.0315
  • 500:$1.2377
  • 100:$1.3587
  • 10:$1.6364
  • 8:$1.8508
IRF3808PBF
DISTI # SP001563250		Infineon Technologies AGTrans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB (Alt: SP001563250)
RoHS: Compliant
Min Qty: 1		Europe - 3000
  • 1:€1.1559
  • 10:€1.0499
  • 25:€0.9629
  • 50:€0.9239
  • 100:€0.8889
  • 500:€0.8559
  • 1000:€0.8249
IRF3808PBF
DISTI # IRF3808PBF		Infineon Technologies AGTrans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3808PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.9069
  • 2000:$0.8749
  • 4000:$0.8429
  • 6000:$0.8149
  • 10000:$0.7999
IRF3808PBF
DISTI # 38K2794		Infineon Technologies AGMOSFET Transistor, N Channel, 140 A, 75 V, 7 mohm, 10 V, 4 V , RoHS Compliant: Yes0
    IRF3808PBF
    DISTI # 70017476    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 5.9 Milliohms,ID 140A,TO-220AB,PD 330W,-55de
    RoHS: Compliant    		0
    • 1:$4.4200
    • 10:$3.9000
    • 100:$3.4000
    • 500:$2.9500
    • 1000:$2.6000
    IRF3808PBFInternational Rectifier 
    RoHS: Not Compliant    		147
    • 1000:$1.1600
    • 500:$1.2200
    • 100:$1.2700
    • 25:$1.3300
    • 1:$1.4300
    IRF3808PBF
    DISTI # 942-IRF3808PBF    		Infineon Technologies AGMOSFET MOSFT 75V 140A 7mOhm 150nC
    RoHS: Compliant    		1320
    • 1:$2.3200
    • 10:$1.9700
    • 100:$1.5800
    • 500:$1.3800
    • 1000:$1.1500
    IRF3808PBFInternational Rectifier 50
    • 3:$1.9500
    • 12:$1.4625
    • 36:$1.2188
    IRF3808PBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB40
    • 14:$1.6250
    • 3:$1.9500
    • 1:$2.6000
    IRF3808PBF
    DISTI # 8655768    		Infineon Technologies AGMOSFET N-CH 80V 140A HEXFET TO-220AB, TU60
    • 5:£1.7960
    • 100:£1.5800
    • 250:£1.3820
    • 500:£1.2920
    • 1000:£1.2200
    IRF3808PBF
    DISTI # 8655768P    		Infineon Technologies AGMOSFET N-CH 80V 140A HEXFET TO-220AB, TU400
    • 100:£1.5800
    • 250:£1.3820
    • 500:£1.2920
    • 1000:£1.2200
    IRF3808PBF
    DISTI # 8312815    		Infineon Technologies AGMOSFET N-CH 80V 140A HEXFET TO-220AB, PK65
    • 5:£1.7960
    • 35:£1.5800
    • 70:£1.3820
    • 125:£1.2920
    • 250:£1.2200
    IRF3808PBF
    DISTI # IRF3808PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,140A,330W,TO220AB240
    • 1:$1.8900
    • 3:$1.7000
    • 10:$1.4300
    • 100:$1.2400
    IRF3808PBF
    DISTI # IRF3808PBF    		Infineon Technologies AGN-Ch 75V 140A 330W 0,007R TO220AB
    RoHS: Compliant    		1330
    • 10:€1.2400
    • 50:€0.9380
    • 200:€0.8380
    • 500:€0.8070
    IRF3808PBF
    DISTI # XSLY00000000745    		INFINEON/IRTO-220AB
    RoHS: Compliant    		3600
    • 600:$1.2300
    • 3600:$1.1500
    IRF3808PBF
    DISTI # C1S322000480454    		Infineon Technologies AGTrans MOSFET N-CH Si 80V 140A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1000
    • 1000:$1.0315
    • 500:$1.2377
    • 100:$1.3587
    • 10:$1.6364
    IRF3808PBF
    DISTI # 8657661    		Infineon Technologies AGMOSFET, N, 75V, 140A, TO-220
    RoHS: Compliant    		0
    • 1:$3.6800
    • 10:$3.1200
    • 100:$2.5000
    • 500:$2.1900
    • 1000:$1.8200
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IRF3808PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,31 $
    2,31 $
    10
    1,96 $
    19,60 $
    100
    1,57 $
    157,00 $
    500
    1,37 $
    685,00 $
    1000
    1,14 $
    1 140,00 $
    2000
    1,06 $
    2 120,00 $
    5000
    1,02 $
    5 100,00 $
    10000
    0,98 $
    9 850,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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