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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BTS282Z E3180A DISTI # BTS282ZE3180AINTR-ND | Infineon Technologies AG | MOSFET N-CH 49V 80A TO-220-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BTS282ZE3180AXT DISTI # 726-BTS282ZE3180AXT | Infineon Technologies AG | MOSFET N-Ch 49V 80A TO220-7 RoHS: Compliant | 0 | |
| BTS282ZE3180AATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 75000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BTS282ZE3180AATMA2 OMO.#: OMO-BTS282ZE3180AATMA2 |
MOSFET N-Ch 49V 36A D2PAK-6 |
|
Mfr.#: BTS282ZE3230AKSA2 OMO.#: OMO-BTS282ZE3230AKSA2 |
MOSFET TEMPFET |
|
Mfr.#: BTS282ZE3180A OMO.#: OMO-BTS282ZE3180A-1190 |
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BTS282ZE3180AATMA1 OMO.#: OMO-BTS282ZE3180AATMA1-1190 |
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BTS282ZE3230 OMO.#: OMO-BTS282ZE3230-1190 |
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BTS282ZE3230-ND OMO.#: OMO-BTS282ZE3230-ND-1190 |
Neu und Original |
|
Mfr.#: BTS282ZE3230AKSA2 |
MOSFET N-CH 49V 80A TO220-7 |
|
|
Mfr.#: BTS282ZE3180AATMA2-CUT TAPE |
Neu und Original |
|
|
Mfr.#: BTS282ZE3230AKSA2-CUT TAPE |
Neu und Original |
|
Mfr.#: BTS282ZE3180AATMA2 |
MOSFET N-Ch 49V 36A D2PAK-6 |
