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BTS282ZE3180A

BTS282ZE3180A
Mfr. #:
BTS282ZE3180A
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BTS282ZE3180A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
BTS282
Verpackung
Spule
Teil-Aliasnamen
BTS282Z E3180A SP000910848
Gewichtseinheit
0.056438 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-7
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
36 ns
Anstiegszeit
37 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
36 A
Vds-Drain-Source-Breakdown-Voltage
49 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Widerstand
6.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
70 ns
Typische-Einschaltverzögerungszeit
30 ns
Qg-Gate-Ladung
155 nC
Vorwärts-Transkonduktanz-Min
30 S
Kanal-Modus
Erweiterung
Tags
BTS282ZE31, BTS282ZE, BTS282Z, BTS28, BTS2, BTS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BTS282ZE3180AATMA2
DISTI # V72:2272_06377939		Infineon Technologies AGTrans MOSFET N-CH 49V 80A Automotive 8-Pin(7+Tab) D2PAK T/R
RoHS: Compliant		2865
  • 1000:$2.6669
  • 500:$2.9699
  • 250:$3.4470
  • 100:$3.5170
  • 25:$4.1190
  • 10:$4.1250
  • 1:$4.7780
BTS282ZE3180AATMA2
DISTI # BTS282ZE3180AATMA2CT-ND		Infineon Technologies AGMOSFET N-CH 49V 80A TO-220-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1627In Stock
  • 500:$3.6346
  • 100:$4.4885
  • 10:$5.4740
  • 1:$6.1300
BTS282ZE3180AATMA2
DISTI # BTS282ZE3180AATMA2DKR-ND		Infineon Technologies AGMOSFET N-CH 49V 80A TO-220-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1627In Stock
  • 500:$3.6346
  • 100:$4.4885
  • 10:$5.4740
  • 1:$6.1300
BTS282ZE3180AATMA2
DISTI # BTS282ZE3180AATMA2TR-ND		Infineon Technologies AGMOSFET N-CH 49V 80A TO-220-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$2.9760
BTS282Z E3180A
DISTI # BTS282ZE3180AINTR-ND		Infineon Technologies AGMOSFET N-CH 49V 80A TO-220-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    BTS282Z E3180A
    DISTI # BTS282ZE3180AINCT-ND    		Infineon Technologies AGMOSFET N-CH 49V 80A TO-220-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BTS282Z E3180A
      DISTI # BTS282ZE3180AINDKR-ND      		Infineon Technologies AGMOSFET N-CH 49V 80A TO-220-7
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BTS282ZE3180AATMA2
        DISTI # 20096463        		Infineon Technologies AGTrans MOSFET N-CH 49V 80A Automotive 8-Pin(7+Tab) D2PAK T/R
        RoHS: Compliant        		7000
        • 4000:$2.3507
        • 2000:$2.4151
        • 1000:$2.7123
        BTS282ZE3180AATMA2
        DISTI # 31230057        		Infineon Technologies AGTrans MOSFET N-CH 49V 80A Automotive 8-Pin(7+Tab) D2PAK T/R
        RoHS: Compliant        		2865
        • 1000:$2.6669
        • 500:$2.9699
        • 250:$3.4470
        • 100:$3.5170
        • 25:$4.1190
        • 10:$4.1250
        • 3:$4.7780
        BTS282ZE3180AATMA2
        DISTI # 20167743        		Infineon Technologies AGTrans MOSFET N-CH 49V 80A Automotive 8-Pin(7+Tab) D2PAK T/R
        RoHS: Compliant        		278
        • 250:$2.4151
        • 100:$2.4831
        • 50:$2.5551
        • 25:$2.6313
        • 5:$2.7123
        BTS282ZE3180AATMA2
        DISTI # SP000910848        		Infineon Technologies AGTrans MOSFET N-CH 49V 80A 7-Pin TO-263 T/R (Alt: SP000910848)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Europe - 33000
        • 1000:€2.5900
        • 2000:€2.4900
        • 4000:€2.3900
        • 6000:€2.1900
        • 10000:€2.0900
        BTS282ZE3180AATMA2
        DISTI # BTS282ZE3180AATMA2        		Infineon Technologies AGTrans MOSFET N-CH 49V 80A 7-Pin TO-263 T/R - Tape and Reel (Alt: BTS282ZE3180AATMA2)
        RoHS: Compliant
        Min Qty: 1000
        Container: Reel        		Americas - 0
        • 1000:$2.6900
        • 2000:$2.5900
        • 4000:$2.4900
        • 6000:$2.4900
        • 10000:$2.3900
        BTS282ZE3180AATMA2
        DISTI # 13AC8357        		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 49V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:49V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes792
        • 500:$3.2100
        • 250:$3.5800
        • 100:$3.7700
        • 50:$3.9600
        • 25:$4.1600
        • 10:$4.3500
        • 1:$5.1200
        BTS282ZE3180AInfineon Technologies AG 
        RoHS: Not Compliant        		16298
        • 1000:$2.4100
        • 500:$2.5400
        • 100:$2.6400
        • 25:$2.7500
        • 1:$2.9600
        BTS282Z E3180AInfineon Technologies AG 
        RoHS: Not Compliant        		646
        • 1000:$2.0400
        • 500:$2.1500
        • 100:$2.2400
        • 25:$2.3300
        • 1:$2.5100
        BTS282ZE3180AATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Not Compliant        		75000
        • 1000:$2.0400
        • 500:$2.1500
        • 100:$2.2400
        • 25:$2.3300
        • 1:$2.5100
        BTS282ZE3180ANTMA1Infineon Technologies AG 
        RoHS: Not Compliant        		84000
        • 1000:$3.0700
        • 500:$3.2300
        • 100:$3.3600
        • 25:$3.5000
        • 1:$3.7700
        BTS282ZE3180AATMA2Infineon Technologies AGSingle N-Channel 49 V 6.5 mOhm 155 nC Enhancement Mode Speed TEMPFET - D2PAK-7
        RoHS: Compliant        		60Cut Tape/Mini-Reel
        • 1:$3.4500
        • 50:$3.0400
        • 100:$2.9700
        • 250:$2.8800
        • 500:$2.7600
        BTS282Z E3180A
        DISTI # 726-BTS282ZE3180A        		Infineon Technologies AGMOSFET N-Ch 49V 13A TO220-7
        RoHS: Not compliant        		0
          BTS282ZE3180AATMA2
          DISTI # 726-BTS282ZE3180AATM          		Infineon Technologies AGMOSFET N-Ch 49V 36A D2PAK-6595
          • 1:$5.1200
          • 10:$4.3500
          • 100:$3.7700
          • 250:$3.5800
          • 500:$3.2100
          • 1000:$2.7100
          • 2000:$2.5800
          BTS282ZE3180AXT
          DISTI # 726-BTS282ZE3180AXT          		Infineon Technologies AGMOSFET N-Ch 49V 80A TO220-7
          RoHS: Compliant          		0
            BTS282ZE3180AATMA2
            DISTI # 1107112P            		Infineon Technologies AGMOSFET N-CH + TSENSOR 49V 36A TO263-7, RL831
            • 20:£1.9130
            BTS282ZE-3180AInfineon Technologies AG80A, 49V, 0.0095OHM, N-CHANNEL, SI, POWER, MOSFET18
              BTS282ZE3180AInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              RoHS: Not Compliant              		Europe - 538
                BTS282ZE3180AATMA2
                DISTI # 2725828                		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 49V, TO-263
                RoHS: Compliant                		792
                • 500:$5.8000
                • 100:$7.1600
                • 10:$8.7300
                • 1:$9.7800
                BTS282ZE3180AATMA2
                DISTI # 2725828                		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 49V, TO-263
                RoHS: Compliant                		841
                • 500:£1.8500
                • 250:£1.8800
                • 100:£1.9200
                • 10:£1.9500
                • 1:£1.9800
                BTS282ZE3180AATMA2
                DISTI # XSKDRABS0028567                		Infineon Technologies AG 
                RoHS: Compliant                		3000
                • 3000:$3.5000
                • 1000:$3.7500
                BTS282ZE3180AATMA2
                DISTI # XSFP00000147565                		Infineon Technologies AGPowerField-EffectTransistor,8AI(D),500V,0.85ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET
                RoHS: Compliant                		32
                • 32:$4.3100
                • 29:$4.6000
                Bild Teil # Beschreibung
                BTS282J

                Mfr.#: BTS282J

                OMO.#: OMO-BTS282J-1190

                		 Neu und Original
                BTS282Z Z

                Mfr.#: BTS282Z Z

                OMO.#: OMO-BTS282Z-Z-1190

                		 Neu und Original
                BTS282Z E3180A

                Mfr.#: BTS282Z E3180A

                OMO.#: OMO-BTS282Z-E3180A-INFINEON-TECHNOLOGIES

                		 MOSFET N-CH 49V 80A TO-220-7
                BTS282Z-E3180A

                Mfr.#: BTS282Z-E3180A

                OMO.#: OMO-BTS282Z-E3180A-1190

                		 Neu und Original
                BTS282ZE3180A

                Mfr.#: BTS282ZE3180A

                OMO.#: OMO-BTS282ZE3180A-1190

                		 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                BTS282ZE3180A/BTS282ZE3

                Mfr.#: BTS282ZE3180A/BTS282ZE3

                OMO.#: OMO-BTS282ZE3180A-BTS282ZE3-1190

                		 Neu und Original
                BTS282ZE3180AATMA1

                Mfr.#: BTS282ZE3180AATMA1

                OMO.#: OMO-BTS282ZE3180AATMA1-1190

                		 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                BTS282ZE3180ANTMA1

                Mfr.#: BTS282ZE3180ANTMA1

                OMO.#: OMO-BTS282ZE3180ANTMA1-1190

                		 - Bulk (Alt: BTS282ZE3180ANTMA1)
                BTS282ZE3230

                Mfr.#: BTS282ZE3230

                OMO.#: OMO-BTS282ZE3230-1190

                		 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
                BTS282ZE3180AATMA2

                Mfr.#: BTS282ZE3180AATMA2

                OMO.#: OMO-BTS282ZE3180AATMA2-INFINEON-TECHNOLOGIES

                		 MOSFET N-Ch 49V 36A D2PAK-6
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                5500
                Menge eingeben:
                Der aktuelle Preis von BTS282ZE3180A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                3,62 $
                3,62 $
                10
                3,43 $
                34,34 $
                100
                3,25 $
                325,35 $
                500
                3,07 $
                1 536,40 $
                1000
                2,89 $
                2 892,00 $
                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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