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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BTS282ZE3180ANTMA1 DISTI # BTS282ZE3180ANTMA1 | Infineon Technologies AG | - Bulk (Alt: BTS282ZE3180ANTMA1) Min Qty: 108 Container: Bulk | Americas - 0 |
|
| BTS282Z E3180A DISTI # 726-BTS282ZE3180A | Infineon Technologies AG | MOSFET N-Ch 49V 13A TO220-7 RoHS: Not compliant | 0 | |
| BTS282ZE3180ANTMA1 | Infineon Technologies AG | Infineon N-Channel Power MOSFETBTS248Z - TO220-7-180 RoHS: Not Compliant | 84000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BTS282ZE3180AATMA2 OMO.#: OMO-BTS282ZE3180AATMA2 |
MOSFET N-Ch 49V 36A D2PAK-6 |
|
Mfr.#: BTS282ZE3230AKSA2 OMO.#: OMO-BTS282ZE3230AKSA2 |
MOSFET TEMPFET |
|
Mfr.#: BTS282ZE3180A OMO.#: OMO-BTS282ZE3180A-1190 |
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BTS282ZE3180A/BTS282ZE3 |
Neu und Original |
|
|
Mfr.#: BTS282ZE3180AATMA1 OMO.#: OMO-BTS282ZE3180AATMA1-1190 |
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BTS282ZE3180ANTMA1 OMO.#: OMO-BTS282ZE3180ANTMA1-1190 |
- Bulk (Alt: BTS282ZE3180ANTMA1) |
|
|
Mfr.#: BTS282ZE3230 OMO.#: OMO-BTS282ZE3230-1190 |
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BTS282ZE3230-ND OMO.#: OMO-BTS282ZE3230-ND-1190 |
Neu und Original |
|
|
Mfr.#: BTS282ZE3230AKSA2-CUT TAPE |
Neu und Original |
|
Mfr.#: BTS282ZE3180AATMA2 |
MOSFET N-Ch 49V 36A D2PAK-6 |
