IRGIB15B60KD1P

IRGIB15B60KD1P
Mfr. #:
IRGIB15B60KD1P
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V Low-Vceon
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGIB15B60KD1P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRGIB15B60KD1P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.081130 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3 Full Pack
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB Full-Pak
Aufbau
Single
Leistung max
52W
Reverse-Recovery-Time-trr
67ns
Strom-Kollektor-Ic-Max
19A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
38A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 15A
Schaltenergie
127μJ (on), 334μJ (off)
Gate-Gebühr
56nC
Td-ein-aus-25°C
30ns/173ns
Testbedingung
400V, 15A, 22 Ohm, 15V
Pd-Verlustleistung
52 W
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
1.8 V
Kontinuierlicher Kollektorstrom-bei-25-C
19 A
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
IRGIB15B60KD1P, IRGIB15, IRGIB1, IRGIB, IRGI, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, Infineon IRGIB15B60KD1P IGBT, 19 A 600 V, 3-Pin TO-220
***ical
Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ineon
Target Applications: Fan; Pump; Solar; UPS; Washing Machine
***ied Electronics & Automation
IGBT 19A 600V Ultrafast Diode TO-220FP
***i-Key
IGBT ULT FAST DIO 600V TO-220FP
***ark
IGBT, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:19A; Voltage, Vce Sat Max:2.2V; Power Dissipation:52W; Case Style:TO-220FP; Termination Type:Through Hole; ;RoHS Compliant: Yes
***nell
IGBT, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:19A; Voltage, Vce Sat Max:2.2V; Power Dissipation:52W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:38A; Power, Pd:52W; Time, Rise:35ns
***ment14 APAC
IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:52W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:19A; Package / Case:TO-220FP; Power Dissipation Max:52W; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRGIB15B60KD1P
DISTI # 31066240
Infineon Technologies AGTrans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
RoHS: Compliant
1000
  • 5000:$1.8528
  • 2500:$1.9200
  • 1000:$2.0256
  • 500:$2.4000
  • 250:$2.6688
  • 100:$2.8128
  • 10:$3.2448
IRGIB15B60KD1P
DISTI # IRGIB15B60KD1P-ND
Infineon Technologies AGIGBT 600V 19A 52W TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
3990In Stock
  • 1000:$2.2075
  • 500:$2.6175
  • 100:$3.0747
  • 50:$3.5478
  • 1:$4.1800
IRGIB15B60KD1P
DISTI # C1S322000499975
Infineon Technologies AGTrans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
RoHS: Compliant
1000
  • 1000:$2.1500
  • 500:$2.3200
  • 100:$3.0300
  • 50:$3.3000
  • 10:$4.0200
  • 1:$6.2000
IRGIB15B60KD1P-EL
DISTI # IRGIB15B60KD1P
Infineon Technologies AGTrans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$1.9900
  • 10:$1.9900
  • 25:$1.9900
  • 50:$1.9900
  • 100:$1.8900
  • 500:$1.7900
  • 1000:$1.7900
IRGIB15B60KD1P
DISTI # 63J7449
Infineon Technologies AGSINGLE IGBT, 600V,DC Collector Current:19A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:52W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:- RoHS Compliant: Yes103
  • 1:$4.5800
  • 10:$3.9500
  • 25:$3.7900
  • 50:$3.6300
  • 100:$3.4700
  • 250:$3.3200
  • 500:$3.0200
IRGIB15B60KD1P
DISTI # 70600036
Infineon Technologies AGIRGIB15B60KD1P,IGBT Transistor,19 A 600 V,3-Pin TO-220
RoHS: Compliant
0
  • 2:$5.5100
IRGIB15B60KD1P
DISTI # 942-IRGIB15B60KD1P
Infineon Technologies AGIGBT Transistors 600V Low-Vceon
RoHS: Compliant
3669
  • 1:$3.9800
  • 10:$3.3800
  • 100:$2.9300
  • 250:$2.7800
  • 500:$2.5000
IRGIB15B60KD1PInternational RectifierInsulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant
96
  • 1000:$2.3200
  • 500:$2.4400
  • 100:$2.5400
  • 25:$2.6500
  • 1:$2.8500
IRGIB15B60KD1P
DISTI # 8303271P
Infineon Technologies AGIGBT 19A 600V ULTRAFAST DIODE TO-220FP, TU296
  • 10:£2.9700
IRGIB15B60KD1P
DISTI # 8303271
Infineon Technologies AGIGBT 19A 600V ULTRAFAST DIODE TO-220FP, PK78
  • 2:£3.6250
  • 10:£2.9700
IRGIB15B60KD1P
DISTI # 1013530
Infineon Technologies AGIGBT, TO-220FP
RoHS: Compliant
2103
  • 1:$6.3000
  • 10:$5.3500
  • 100:$4.6500
  • 250:$4.4000
  • 500:$3.9600
  • 1000:$3.3400
  • 2500:$3.3200
IRGIB15B60KD1P
DISTI # 1013530
Infineon Technologies AGIGBT, TO-220FP
RoHS: Compliant
2110
  • 1:£3.4000
  • 10:£2.1100
  • 100:£2.0500
  • 250:£1.9800
  • 500:£1.9200
Bild Teil # Beschreibung
IRGIB15B60KD1P

Mfr.#: IRGIB15B60KD1P

OMO.#: OMO-IRGIB15B60KD1P

IGBT Transistors 600V Low-Vceon
IRGIB15B60KD1P-EL

Mfr.#: IRGIB15B60KD1P-EL

OMO.#: OMO-IRGIB15B60KD1P-EL-1190

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P)
IRGIB15B60KD1P

Mfr.#: IRGIB15B60KD1P

OMO.#: OMO-IRGIB15B60KD1P-INFINEON-TECHNOLOGIES

IGBT Transistors 600V Low-Vceon
IRGIB15B60KD1

Mfr.#: IRGIB15B60KD1

OMO.#: OMO-IRGIB15B60KD1-1190

Neu und Original
IRGIB15B60KD1PBF

Mfr.#: IRGIB15B60KD1PBF

OMO.#: OMO-IRGIB15B60KD1PBF-1190

Neu und Original
IRGIB15B60KD1PBF,GIB15B6

Mfr.#: IRGIB15B60KD1PBF,GIB15B6

OMO.#: OMO-IRGIB15B60KD1PBF-GIB15B6-1190

Neu und Original
IRGIB15B60KD1PBF.

Mfr.#: IRGIB15B60KD1PBF.

OMO.#: OMO-IRGIB15B60KD1PBF--1190

Neu und Original
IRGIB15B60KD1PINFINEON

Mfr.#: IRGIB15B60KD1PINFINEON

OMO.#: OMO-IRGIB15B60KD1PINFINEON-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IRGIB15B60KD1P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,78 $
2,78 $
10
2,64 $
26,40 $
100
2,50 $
250,13 $
500
2,36 $
1 181,15 $
1000
2,22 $
2 223,40 $
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