PartNumber | IRGIB15B60KD1P | IRGIB10B60KD1P |
Description | IGBT Transistors 600V Low-Vceon | IGBT Transistors 600V Low-Vceon |
Manufacturer | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | TO-220FP-3 | TO-220FP-3 |
Mounting Style | Through Hole | Through Hole |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.8 V | 2.1 V |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Continuous Collector Current at 25 C | 19 A | 16 A |
Pd Power Dissipation | 52 W | 44 W |
Minimum Operating Temperature | - 55 C | - 55 C |
Packaging | Tube | Tube |
Height | 9.02 mm | 9.02 mm |
Length | 10.67 mm | 10.67 mm |
Width | 4.83 mm | 4.83 mm |
Brand | Infineon Technologies | Infineon / IR |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 2000 | 2000 |
Subcategory | IGBTs | IGBTs |
Part # Aliases | SP001537730 | SP001549794 |
Unit Weight | 0.081130 oz | 0.081130 oz |