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PD85004

PD85004
Mfr. #:
PD85004
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors RF PWR TRANSISTOR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD85004 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PD85004 Mehr Informationen PD85004 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2 A
Vds - Drain-Source-Durchbruchspannung:
40 V
Gewinnen:
17 dB
Ausgangsleistung:
4 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
SOT-89-4
Verpackung:
Spule
Aufbau:
Single
Höhe:
1.6 mm
Länge:
4.6 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD85004
Typ:
HF-Leistungs-MOSFET
Breite:
2.6 mm
Marke:
STMicroelectronics
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
6 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
15 V
Gewichtseinheit:
0.004603 oz
Tags
PD8500, PD850, PD85, PD8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89
***icroelectronics
4W 13.6V 870MHz LDMOS in SOT89 plastic package
***roFlash
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
N CHANNEL RF POWERT TRANSISTOR, LdmoST, 40V, 2A, SOT-89; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:-; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***ure Electronics
PD84001 Series 870 MHz 6 W 18 V N-Channel RF Power Transistor - SOT-89
***et
Transistor RF FET N-CH 18V 1.5A 870MHz 4-Pin SOT-89 T/R
***ark
N CHANNEL RF POWER TRANSISTOR, LdmoST, 18V, 1.5A, SOT-89; Drain Source Voltage Vds:18V; Continuous Drain Current Id:1.5A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:1GHz; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
***r Electronics
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 30 V 120 mOhm SMT Enhancement Mode Mosfet - SOT-89
***ical
Trans MOSFET N-CH 30V 3.3A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ark
Mosfet, N-Ch, 30V, 3.3A, Sot-89 Rohs Compliant: Yes |Diodes Inc. ZXMN3A01ZTA
***p One Stop Global
Trans RF MOSFET N-CH 25V 2A 4-Pin(3+Tab) SOT-89 T/R
*** Electronic Components
RF MOSFET Transistors RF PWR transistor LdmoST plastic fam
***nell
MOSFET, RF, N-CH, 25V, 2A, SOT-89-3; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 2A; Power Dissipation Pd: 6W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: SOT-89; No. of Pins:
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET P-CH 100V 1.5A 3-Pin PCP
***hard Electronics
2SJ670 - P-CHANNEL SILICON MOSFE
***nell
MOSFET, P CH, 100V, 1.5A, SOT89; Transistor Polarity:P-Channel; Current Id Max:-1.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3
***ure Electronics
N-Channel 60 V 3.2 A 1 W Surface Mount OptiMOS™ Small-Signal-Transistor - SOT-89
***ow.cn
Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin(3+Tab) SOT-89 T/R
***nell
MOSFET, AEC-Q101, N-CH, 60V, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 2.1 / Rise Time ns = 2.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1
***hard Electronics
ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
***ure Electronics
Single N-Channel 250 V 3.5 W 4.2 nC Silicon Surface Mount Mosfet - SOT-89
***emi
Single N-Channel Power MOSFET, 250V, 1.2A, 2.4Ω
***ical
Trans MOSFET N-CH 250V 1.2A 4-Pin(3+Tab) SOT-89 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes
***nell
NCH 10V DRIVE SERIES; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
PD85004
DISTI # 30702578		STMicroelectronicsTrans RF MOSFET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant		5000
  • 2500:$1.5030
PD85004
DISTI # 497-8291-1-ND		STMicroelectronicsFET RF 40V 870MHZ
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8850In Stock
  • 1000:$1.9980
  • 500:$2.3247
  • 100:$2.6892
  • 10:$3.2300
  • 1:$3.5700
PD85004
DISTI # 497-8291-6-ND		STMicroelectronicsFET RF 40V 870MHZ
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8850In Stock
  • 1000:$1.9980
  • 500:$2.3247
  • 100:$2.6892
  • 10:$3.2300
  • 1:$3.5700
PD85004
DISTI # 497-8291-2-ND		STMicroelectronicsFET RF 40V 870MHZ
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 5000:$1.7934
  • 2500:$1.8544
PD85004
DISTI # PD85004		STMicroelectronicsTrans MOSFET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R (Alt: PD85004)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 1:€2.7900
  • 10:€2.2500
  • 100:€1.9600
  • 250:€1.8600
  • 500:€1.6500
  • 1000:€1.4100
PD85004
DISTI # PD85004		STMicroelectronicsTrans MOSFET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: PD85004)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$1.7900
  • 5000:$1.6900
  • 10000:$1.5900
  • 15000:$1.4900
  • 25000:$1.4900
PD85004
DISTI # 511-PD85004		STMicroelectronicsRF MOSFET Transistors RF PWR TRANSISTOR
RoHS: Compliant		3547
  • 1:$3.2300
  • 10:$2.7500
  • 100:$2.3800
  • 250:$2.2600
  • 500:$2.0300
  • 1000:$1.7100
  • 2500:$1.6300
  • 5000:$1.5700
PD85004
DISTI # 8805355P		STMicroelectronicsRF POWER MOSFET N-CH 4W LDMOST SOT-89, RL4765
  • 25:£1.9900
  • 100:£1.7240
  • 250:£1.6360
  • 500:£1.4600
PD85004
DISTI # 8805355		STMicroelectronicsRF POWER MOSFET N-CH 4W LDMOST SOT-89, PK95
  • 5:£2.5100
  • 25:£1.9900
  • 100:£1.7240
  • 250:£1.6360
  • 500:£1.4600
PD85004
DISTI # PD85004		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 2500:$1.7700
PD85004
DISTI # 2629762		STMicroelectronicsRF MOSFET, N-CH, 40V, SOT-89-3
RoHS: Compliant		0
  • 1:£2.5000
  • 10:£2.0300
  • 100:£1.7500
  • 250:£1.6700
  • 500:£1.4900
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von PD85004 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,23 $
3,23 $
10
2,75 $
27,50 $
100
2,38 $
238,00 $
250
2,26 $
565,00 $
500
2,03 $
1 015,00 $
1000
1,71 $
1 710,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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