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SI4490DY-T1-GE3

SI4490DY-T1-GE3
Mfr. #:
SI4490DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 200V 2.85A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4490DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4490DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI4490DY-T1, SI4490DY-T, SI4490, SI449, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.08 O 42 nC Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET,N CH,DIODE,200V,4A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:2.85A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4490DY-T1-GE3
DISTI # V72:2272_07431568		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R
RoHS: Compliant		4500
  • 3000:$0.8594
  • 1000:$0.9139
  • 500:$1.0505
  • 250:$1.2124
  • 100:$1.2316
  • 25:$1.5388
  • 10:$1.6124
  • 1:$2.0266
SI4490DY-T1-GE3
DISTI # V36:1790_07431568		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$1.2410
SI4490DY-T1-GE3
DISTI # SI4490DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 200V 2.85A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4983In Stock
  • 1000:$0.9183
  • 500:$1.1083
  • 100:$1.3490
  • 10:$1.6780
  • 1:$1.8700
SI4490DY-T1-GE3
DISTI # SI4490DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 200V 2.85A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4983In Stock
  • 1000:$0.9183
  • 500:$1.1083
  • 100:$1.3490
  • 10:$1.6780
  • 1:$1.8700
SI4490DY-T1-GE3
DISTI # SI4490DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 200V 2.85A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.7789
  • 5000:$0.7993
  • 2500:$0.8301
SI4490DY-T1-GE3
DISTI # 33632331		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R
RoHS: Compliant		7500
  • 2500:$0.6076
SI4490DY-T1-GE3
DISTI # 31621166		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R
RoHS: Compliant		4500
  • 11:$2.0266
SI4490DY-T1-GE3
DISTI # SI4490DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R (Alt: SI4490DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 125000:$2.0194
  • 62500:$2.0815
  • 25000:$2.1476
  • 12500:$2.3328
  • 7500:$2.7612
  • 5000:$3.4692
  • 2500:$4.5100
SI4490DY-T1-GE3
DISTI # SI4490DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4490DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5409
  • 15000:$0.5559
  • 10000:$0.5719
  • 5000:$0.5959
  • 2500:$0.6139
SI4490DY-T1-GE3
DISTI # SI4490DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R (Alt: SI4490DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5069
  • 15000:€0.5299
  • 10000:€0.5999
  • 5000:€0.7389
  • 2500:€1.0309
SI4490DY-T1-GE3
DISTI # 84R8057		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2.85A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 10:$1.6600
  • 1:$2.0000
SI4490DY-T1-GE3
DISTI # 15R5042		Vishay IntertechnologiesN CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:2.85A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 10000:$1.1400
  • 6000:$1.1900
  • 4000:$1.2300
  • 2000:$1.3700
  • 1000:$1.4400
  • 1:$1.5300
SI4490DY-T1-GE3
DISTI # 781-SI4490DY-GE3		Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs SO-8
RoHS: Compliant		4289
  • 1:$1.9800
  • 10:$1.6400
SI4490DY-T1-GE3
DISTI # 1858959		Vishay IntertechnologiesMOSFET,N CH,DIODE,200V,4A,8-SOIC
RoHS: Compliant		0
  • 1000:$1.3900
  • 500:$1.6800
  • 100:$2.0400
  • 10:$2.5300
  • 1:$2.8200
SI4490DY-T1-GE3
DISTI # 1858959RL		Vishay IntertechnologiesMOSFET,N CH,DIODE,200V,4A,8-SOIC
RoHS: Compliant		0
  • 1000:$1.3900
  • 500:$1.6800
  • 100:$2.0400
  • 10:$2.5300
  • 1:$2.8200
SI4490DY-T1-GE3
DISTI # 1858959		Vishay IntertechnologiesMOSFET,N CH,DIODE,200V,4A,8-SOIC0
  • 500:£0.9050
  • 250:£1.0300
  • 100:£1.1600
  • 10:£1.3400
  • 1:£1.7700
SI4490DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 2.85A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		2500
    SI4490DY-T1-GE3Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 5000
    • 2500:$0.6230
    • 5000:$0.5980
    • 10000:$0.5760
    Bild Teil # Beschreibung
    SI4490DY-T1-GE3

    Mfr.#: SI4490DY-T1-GE3

    OMO.#: OMO-SI4490DY-T1-GE3

    		 MOSFET 200V Vds 20V Vgs SO-8
    SI4490DY-T1-E3

    Mfr.#: SI4490DY-T1-E3

    OMO.#: OMO-SI4490DY-T1-E3

    		 MOSFET RECOMMENDED ALT 781-SI4490DY-TR
    SI4490DY-T1-E3-CUT TAPE

    Mfr.#: SI4490DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4490DY-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI4490DY

    Mfr.#: SI4490DY

    OMO.#: OMO-SI4490DY-1190

    		 Neu und Original
    SI4490DY-E3

    Mfr.#: SI4490DY-E3

    OMO.#: OMO-SI4490DY-E3-1190

    		 MOSFET RECOMMENDED ALT 781-SI4490DY-T1-E3
    SI4490DY-T1-E3

    Mfr.#: SI4490DY-T1-E3

    OMO.#: OMO-SI4490DY-T1-E3-VISHAY

    		 MOSFET N-CH 200V 2.85A 8-SOIC
    SI4490DY-T1-GE3

    Mfr.#: SI4490DY-T1-GE3

    OMO.#: OMO-SI4490DY-T1-GE3-VISHAY

    		 MOSFET N-CH 200V 2.85A 8-SOIC
    SI4490DY-TI-E3

    Mfr.#: SI4490DY-TI-E3

    OMO.#: OMO-SI4490DY-TI-E3-1190

    		 Neu und Original
    SI4490DYT1

    Mfr.#: SI4490DYT1

    OMO.#: OMO-SI4490DYT1-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SI4490DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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