SI4490

SI4490DY-T1-E3 vs SI4490DY vs SI4490DY-E3

 
PartNumberSI4490DY-T1-E3SI4490DYSI4490DY-E3
DescriptionMOSFET RECOMMENDED ALT 781-SI4490DY-TRMOSFET RECOMMENDED ALT 781-SI4490DY-T1-E3
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance80 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSI4--
Transistor Type1 N-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min19 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSI4490DY-E3--
Unit Weight0.017870 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4490DY-T1-GE3 MOSFET 200V Vds 20V Vgs SO-8
SI4490DY-T1-E3 MOSFET RECOMMENDED ALT 781-SI4490DY-TR
SI4490DY-T1-E3-CUT TAPE Neu und Original
SI4490DY Neu und Original
SI4490DY-E3 MOSFET RECOMMENDED ALT 781-SI4490DY-T1-E3
SI4490DY-TI-E3 Neu und Original
SI4490DYT1 Neu und Original
Vishay
Vishay
SI4490DY-T1-E3 MOSFET N-CH 200V 2.85A 8-SOIC
SI4490DY-T1-GE3 MOSFET N-CH 200V 2.85A 8-SOIC
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