IPA50R650CE

Mfr. #:: IPA50R650CE
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 500V 6.1A TO220FP
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPA50R650CE Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: INF

Produktkategorie: FETs - Einzeln

Serie: XPA50R650

Verpackung: Rohr

Teil-Aliasnamen: IPA50R650CEXKSA2 SP001217232

Montageart: Durchgangsloch

Paket-Koffer: PG-TO220

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: 1 N-Channel

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 27.2 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 13 ns

Anstiegszeit: 5 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 6.1 A

Vds-Drain-Source-Breakdown-Voltage: 500 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Widerstand: 650 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 13 ns

Typische-Einschaltverzögerungszeit: 6 ns

Qg-Gate-Ladung: 15 nC

Vorwärts-Transkonduktanz-Min: -

Kanal-Modus: Erweiterung

Entwicklungs-Kit: -

Tags: IPA50R6, IPA50, IPA5, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA50R650CE Beschreibung

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.2pF 50volts C0G +/-0.25pF

***ponent Stockers USA: 6.1 A 500 V 0.65 ohm N-CHANNEL Si POWER MOSFET TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 6.1A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***ical: Trans MOSFET N-CH 500V 11.1A Automotive 3-Pin(3+Tab) TO-220FP Tube

*** Electronic Components: Darlington Transistors MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.1pF 50volts C0G +/-0.5pF

***nell: MOSFET, N-CH, 500V, 11.1A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V;

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11.1 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 28

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***itex: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F

***ark: Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ineon SCT: Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

***ow.cn: Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***icroelectronics: N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

***ure Electronics: N-Channel 600 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N-CH, 600V, 7.5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***icroelectronics: N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3

***(Formerly Allied Electronics): MOSFET N-Ch 600V 7.5A MDmesh II TO-220

***ark: MOSFET, N-CH, 600V, 7.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 600V, 7.5A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***ical: Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP

***ark: Mosfet, N-Ch, 500V, 7.6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***ure Electronics: N-Channel 600 V 5.6 A 800 mO 17.2 nC CoolMOS CE Power Transistor - TO-220FP

***ical: Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ical: Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 500V, 5.3A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

***emi: N-Channel Power MOSFET, UniFETTM II, 500 V, 4.5 A, 1.5 Ω, TO-220F

***Yang: Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***inecomponents.com: UniFET2 500V N-channel MOSFET, TO220F Single gage

***r Electronics: Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: N CH MOSFET, UNITFET, 500V, 4.5A, TO-220; N CH MOSFET, UNITFET, 500V, 4.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ark: MOSFET, N-CH, 500V, 5.3A, TO-220FP; Transistor Polarity:N Channel; Continuous Dr

***et: Trans MOSFET N-CH 500V 5.3A 3-Pin TO-220 Full-Pak

***nell: MOSFET, N-CH, 500V, 5.3A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPA50R650CE DISTI # C1S322000447033	Infineon Technologies AG	MOSFETs RoHS: Compliant	14	10:$0.8660 5:$0.9280
IPA50R650CE DISTI # IPA50R650CE-ND	Infineon Technologies AG	MOSFET N-CH 500V 6.1A TO220FP RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPA50R650CEXKSA2 DISTI # IPA50R650CEXKSA2-ND	Infineon Technologies AG	MOSFET N-CH 500V 4.6A TO-220FP RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPA50R650CEXKSA2 DISTI # SP001217232	Infineon Technologies AG	Trans MOSFET N-CH 550V 6.1A 3-Pin TO-220 Tube (Alt: SP001217232) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.5399 10:€0.4649 25:€0.3959 50:€0.3399 100:€0.3329 500:€0.3279 1000:€0.3219
IPA50R650CEXKSA1 DISTI # SP000992086	Infineon Technologies AG	Trans MOSFET N-CH 550V 6.1A 3-Pin TO-220 FP Tube (Alt: SP000992086) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.5259 10:€0.4459 25:€0.3969 50:€0.3569 100:€0.3479 500:€0.3389 1000:€0.3319
IPA50R650CEZKSA2	Infineon Technologies AG	RoHS: Not Compliant	300	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
IPA50R650CE DISTI # 726-IPA50R650CE	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	3	1:$0.9000 10:$0.7450 100:$0.4810
IPA50R650CEXKSA1 DISTI # 726-IPA50R650CEXKSA1	Infineon Technologies AG	MOSFET N-Ch 500V 6.1A TO220FP-3 RoHS: Compliant	275	1:$1.6200 10:$1.3000 100:$1.0000 500:$0.8860 1000:$0.6990 2500:$0.6180 5000:$0.6060 10000:$0.5950
IPA50R650CEXKSA2 DISTI # 726-IPA50R650CEXKSA2	Infineon Technologies AG	MOSFET CONSUMER	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPA50R380CE OMO.#: OMO-IPA50R380CE	MOSFET CONSUMER
	Mfr.#: IPA50R350CP OMO.#: OMO-IPA50R350CP	MOSFET N-Ch 500V 10A TO220FP-3 CoolMOS CP
	Mfr.#: IPA50R199CE OMO.#: OMO-IPA50R199CE-1190	Neu und Original
	Mfr.#: IPA50R250CP FDPF13N50 OMO.#: OMO-IPA50R250CP-FDPF13N50-1190	Neu und Original
	Mfr.#: IPA50R280CE(5R280E) OMO.#: OMO-IPA50R280CE-5R280E--1190	Neu und Original
	Mfr.#: IPA50R280CEXKSA1 OMO.#: OMO-IPA50R280CEXKSA1-1190	Neu und Original
	Mfr.#: IPA50R350CP,5R350P OMO.#: OMO-IPA50R350CP-5R350P-1190	Neu und Original
	Mfr.#: IPA50R950CEXKSA2 , 2SD18 OMO.#: OMO-IPA50R950CEXKSA2-2SD18-1190	Neu und Original
	Mfr.#: IPA50R380CEXKSA1 OMO.#: OMO-IPA50R380CEXKSA1-124	Darlington Transistors MOSFET N-Ch 550V 9.9A TO220FP-3
	Mfr.#: IPA50R500CE OMO.#: OMO-IPA50R500CE-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von IPA50R650CE dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,72 $~~; ~~0,72 $~~

10: ~~0,69 $~~; ~~6,85 $~~

100: ~~0,65 $~~; ~~64,94 $~~

500: ~~0,61 $~~; ~~306,65 $~~

1000: ~~0,58 $~~; ~~577,20 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPA50R650CE

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes