PartNumber | IPA50R650CE | IPA50R650CEXKSA1 | IPA50R650CEXKSA2 |
Description | MOSFET N-CH 500V 6.1A TO220FP | Darlington Transistors MOSFET N-Ch 550V 6.1A TO220FP-3 | MOSFET CONSUMER |
Manufacturer | INF | Infineon Technologies | Infineon Technologies |
Product Category | FETs - Single | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
Series | XPA50R650 | IPA50R650 | - |
Packaging | Tube | Tube | Tube |
Part Aliases | IPA50R650CEXKSA2 SP001217232 | SP000992086 | IPA50R650CE SP001217232 |
Mounting Style | Through Hole | Through Hole | - |
Package Case | PG-TO220 | TO-220-3 | TO-220-3 |
Technology | Si | Si | Si |
Number of Channels | 1 Channel | 1 Channel | - |
Configuration | 1 N-Channel | Single | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Pd Power Dissipation | 27.2 W | 27 W | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Fall Time | 13 ns | 13 ns | - |
Rise Time | 5 ns | 5 ns | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 6.1 A | 6.1 A | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Rds On Drain Source Resistance | 650 mOhms | 500 V | 500 V |
Transistor Polarity | N-Channel | N-Channel | - |
Typical Turn Off Delay Time | 13 ns | 27 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Qg Gate Charge | 15 nC | 15 nC | - |
Forward Transconductance Min | - | - | - |
Channel Mode | Enhancement | - | - |
Development Kit | - | - | - |
Unit Weight | - | 0.211644 oz | - |
Tradename | - | CoolMOS | - |