IPB037N06N3GATMA1

IPB037N06N3GATMA1
Mfr. #:
IPB037N06N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB037N06N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
98 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
188 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
61 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
70 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
30 ns
Teil # Aliase:
G IPB037N06N3 IPB37N6N3GXT SP000397986
Gewichtseinheit:
0.139332 oz
Tags
IPB037N06N3G, IPB037, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 3.7 mOhm 98 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
IPB037N06N3GATMA1
DISTI # V72:2272_06383403
Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB037N06N3GATMA1
    DISTI # V36:1790_06383403
    Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000000:$0.6062
    • 500000:$0.6066
    • 100000:$0.6589
    • 10000:$0.7623
    • 1000:$0.7803
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1882In Stock
    • 500:$0.9700
    • 100:$1.1806
    • 10:$1.4690
    • 1:$1.6400
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1882In Stock
    • 500:$0.9700
    • 100:$1.1806
    • 10:$1.4690
    • 1:$1.6400
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    1000In Stock
    • 10000:$0.6816
    • 5000:$0.6996
    • 2000:$0.7265
    • 1000:$0.7803
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB037N06N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$0.5199
    • 6000:$0.5299
    • 4000:$0.5479
    • 2000:$0.5689
    • 1000:$0.5899
    IPB037N06N3GATMA1
    DISTI # 60R2653
    Infineon Technologies AGMOSFET, N CHANNEL, 60V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$0.8970
    • 100:$1.0300
    • 10:$1.2900
    • 1:$1.5100
    IPB037N06N3GATMA1
    DISTI # 726-IPB037N06N3GATMA
    Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    2000
    • 1:$1.5000
    • 10:$1.2800
    • 100:$1.0200
    • 500:$0.8970
    • 1000:$0.7440
    • 2000:$0.6920
    • 5000:$0.6670
    • 10000:$0.6410
    IPB037N06N3 G
    DISTI # 726-IPB037N06N3G
    Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    0
    • 1:$1.5000
    • 10:$1.2800
    • 100:$1.0200
    • 500:$0.8970
    • 1000:$0.7440
    • 2000:$0.6920
    • 5000:$0.6670
    • 10000:$0.6410
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,90A,188W,PG-TO263-3215
    • 1000:$0.6847
    • 100:$0.7354
    • 10:$0.8469
    • 3:$1.0542
    • 1:$1.2239
    IPB037N06N3GATMA1
    DISTI # 1775530
    Infineon Technologies AGMOSFET, N CH, 90A, 30V, PG-TO263-3
    RoHS: Compliant
    0
    • 500:$1.3800
    • 100:$1.5800
    • 10:$1.9700
    • 1:$2.3100
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von IPB037N06N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
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    ext. Preis
    1
    1,50 $
    1,50 $
    10
    1,28 $
    12,80 $
    100
    1,02 $
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    500
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    448,50 $
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