IPB037N06N3GATMA1 vs IPB037N06N3 G vs IPB037N06N3

 
PartNumberIPB037N06N3GATMA1IPB037N06N3 GIPB037N06N3
DescriptionMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineonINFINEON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance3 mOhms3 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge98 nC98 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation188 W188 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min61 S61 S-
Fall Time5 ns5 ns5 ns
Product TypeMOSFETMOSFET-
Rise Time70 ns70 ns70 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns40 ns40 ns
Typical Turn On Delay Time30 ns30 ns30 ns
Part # AliasesG IPB037N06N3 IPB37N6N3GXT SP000397986IPB037N06N3GATMA1 IPB37N6N3GXT SP000397986-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Part Aliases--IPB037N06N3GATMA1 IPB037N06N3GXT SP000397986
Package Case--TO-252-3
Pd Power Dissipation--188 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--3.7 mOhms
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