IPD50P04P413ATMA1

IPD50P04P413ATMA1
Mfr. #:
IPD50P04P413ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD50P04P413ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD50P04P413ATMA1 DatasheetIPD50P04P413ATMA1 Datasheet (P4-P6)IPD50P04P413ATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
50 A
Rds On - Drain-Source-Widerstand:
12.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
39 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
58 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
XPD50P04
Transistortyp:
1 P-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
IPD50P04P4-13 IPD5P4P413XT SP000840204
Gewichtseinheit:
0.139332 oz
Tags
IPD50P04P4, IPD50P04, IPD50P, IPD50, IPD5, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P413ATMA1
***ure Electronics
Single P-Channel 40 V 12.6 mOhm 39 nC OptiMOS™ Power Mosfet - DPAK
***ical
Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R
***ronik
MOSFET -40V 12.6mOHM AECQ TO252
***ark
MOSFET, P CH, -40V, -50A, TO-252-3
***i-Key
MOSFET P-CH 40V 50A TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, P CH, -40V, -50A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:58W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE P, -40V, -50A, TO-252-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-50A; Tensione Drain Source Vds:-40V; Resistenza di Attivazione Rds(on):0.0092ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:58W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: P-channel - Normal Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: No charge pump required for high side drive.; Simple interface drive circuit; World's lowest RDSon at 40V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
Teil # Mfg. Beschreibung Aktie Preis
IPD50P04P413ATMA1
DISTI # V72:2272_06384858
Infineon Technologies AGTrans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1278
  • 1000:$0.4007
  • 500:$0.5272
  • 250:$0.5727
  • 100:$0.5963
  • 25:$0.6959
  • 10:$0.8506
  • 1:$0.9916
IPD50P04P413ATMA1
DISTI # V36:1790_06384858
Infineon Technologies AGTrans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 250000:$0.3985
  • 25000:$0.4075
  • 2500:$0.4090
IPD50P04P413ATMA1
DISTI # IPD50P04P413ATMA1CT-ND
Infineon Technologies AGMOSFET P-CH 40V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
14810In Stock
  • 1000:$0.4513
  • 500:$0.5717
  • 100:$0.6920
  • 10:$0.8880
  • 1:$0.9900
IPD50P04P413ATMA1
DISTI # IPD50P04P413ATMA1DKR-ND
Infineon Technologies AGMOSFET P-CH 40V 50A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
14810In Stock
  • 1000:$0.4513
  • 500:$0.5717
  • 100:$0.6920
  • 10:$0.8880
  • 1:$0.9900
IPD50P04P413ATMA1
DISTI # IPD50P04P413ATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 40V 50A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
12500In Stock
  • 25000:$0.3700
  • 12500:$0.3739
  • 5000:$0.3885
  • 2500:$0.4090
IPD50P04P413ATMA1
DISTI # 31292865
Infineon Technologies AGTrans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 2500:$0.6891
IPD50P04P413ATMA1
DISTI # 31984709
Infineon Technologies AGTrans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1278
  • 16:$0.9916
IPD50P04P413ATMA1
DISTI # SP000840204
Infineon Technologies AGTrans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R (Alt: SP000840204)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 15000
  • 25000:€0.4469
  • 15000:€0.4769
  • 10000:€0.5239
  • 5000:€0.5869
  • 2500:€0.7519
IPD50P04P413ATMA1
DISTI # IPD50P04P413ATMA1
Infineon Technologies AGTrans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R - Bulk (Alt: IPD50P04P413ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Bulk
Americas - 0
  • 10000:$0.3169
  • 5000:$0.3229
  • 3000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPD50P04P413ATMA1
DISTI # IPD50P04P413ATMA1
Infineon Technologies AGTrans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50P04P413ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4269
  • 15000:$0.4349
  • 10000:$0.4499
  • 5000:$0.4669
  • 2500:$0.4849
IPD50P04P413ATMA1
DISTI # IPD50P04P4-13
Infineon Technologies AGTrans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R (Alt: IPD50P04P4-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    IPD50P04P413ATMA1
    DISTI # 85X6032
    Infineon Technologies AGMOSFET, P-CH, -40V, -50A, 175DEG C, 58W,Transistor Polarity:P Channel,Continuous Drain Current Id:-50A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0092ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes1250
    • 1000:$0.4220
    • 500:$0.5340
    • 250:$0.5700
    • 100:$0.6050
    • 50:$0.6660
    • 25:$0.7260
    • 10:$0.7870
    • 1:$0.9190
    IPD50P04P413ATMA1Infineon Technologies AGSingle P-Channel 40 V 12.6 mOhm 39 nC OptiMOS Power Mosfet - DPAK
    RoHS: Not Compliant
    2500Reel
    • 2500:$0.4200
    IPD50P04P4-13
    DISTI # 726-IPD50P04P4-13
    Infineon Technologies AGMOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
    RoHS: Compliant
    47915
    • 1:$0.9100
    • 10:$0.7790
    • 100:$0.5990
    • 500:$0.5290
    • 1000:$0.4180
    • 2500:$0.3700
    • 10000:$0.3570
    IPD50P04P413ATMA1
    DISTI # 726-IPD50P04P413ATMA
    Infineon Technologies AGMOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
    RoHS: Compliant
    9905
    • 1:$0.9100
    • 10:$0.7790
    • 100:$0.5990
    • 500:$0.5290
    • 1000:$0.4180
    • 2500:$0.3700
    • 10000:$0.3570
    IPD50P04P413ATMA1Infineon Technologies AGPower Field-Effect Transistor, 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    RoHS: Compliant
    143355
    • 1000:$0.3300
    • 500:$0.3500
    • 100:$0.3600
    • 25:$0.3800
    • 1:$0.4100
    IPD50P04P413ATMA1
    DISTI # 8269109P
    Infineon Technologies AGMOSFET P-CH 50A 40V OPTIMOS-P2 TO252, RL4250
    • 3125:£0.2920
    • 1500:£0.2990
    • 625:£0.3600
    • 125:£0.4080
    IPD50P04P413ATMA1
    DISTI # 8269109
    Infineon Technologies AGMOSFET P-CH 50A 40V OPTIMOS-P2 TO252, PK750
    • 3125:£0.2920
    • 1500:£0.2990
    • 625:£0.3600
    • 125:£0.4080
    • 25:£0.5690
    IPD50P04P413ATMA1
    DISTI # 2443398
    Infineon Technologies AGMOSFET, P CH, -40V, -50A, TO-252-3
    RoHS: Compliant
    2026
    • 500:$0.7970
    • 100:$0.9030
    • 10:$1.1700
    • 1:$1.3700
    IPD50P04P413ATMA1
    DISTI # 2443398RL
    Infineon Technologies AGMOSFET, P CH, -40V, -50A, TO-252-3
    RoHS: Compliant
    0
    • 500:$0.7970
    • 100:$0.9030
    • 10:$1.1700
    • 1:$1.3700
    IPD50P04P413ATMA1
    DISTI # 2443398
    Infineon Technologies AGMOSFET, P CH, -40V, -50A, TO-252-34936
    • 500:£0.4120
    • 250:£0.4390
    • 100:£0.4660
    • 10:£0.6610
    • 1:£0.8100
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1992
    Menge eingeben:
    Der aktuelle Preis von IPD50P04P413ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,91 $
    0,91 $
    10
    0,78 $
    7,79 $
    100
    0,60 $
    59,90 $
    500
    0,53 $
    264,50 $
    1000
    0,42 $
    418,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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