CGH40035F

CGH40035F
Mfr. #:
CGH40035F
Hersteller:
N/A
Beschreibung:
RF JFET Transistors DC-6GHz 28V 35W Gain 14dB GaN HEMT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGH40035F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGH40035F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Cree
Produktkategorie
IC-Chips
Verpackung
Tablett
Montageart
Schraube
Betriebstemperaturbereich
-
Paket-Koffer
440193
Technologie
GaN SiC
Aufbau
Single
Transistor-Typ
HEMT
Gewinnen
15 dB
Klasse
-
Ausgangsleistung
45 W
Pd-Verlustleistung
-
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Anwendung
-
Arbeitsfrequenz
2 GHz to 4 GHz
ID-Dauer-Drain-Strom
4.5 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Widerstand
-
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
-
Entwicklungs-Kit
CGH40035F-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Gate-Source-Cutoff-Spannung
-
Maximum-Drain-Gate-Spannung
-
NF-Geräusch-Abbildung
-
P1dB-Kompressionspunkt
-
Tags
CGH40035, CGH4003, CGH400, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 35W, RF Power GaN HEMT Flange Package
***i-Key
RF MOSFET HEMT 28V 440193
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Teil # Mfg. Beschreibung Aktie Preis
CGH40035F
DISTI # CGH40035F-ND
WolfspeedRF MOSFET HEMT 28V 440193
RoHS: Compliant
Min Qty: 1
Container: Tray
586In Stock
  • 1:$164.3400
CGH40035F-TB
DISTI # CGH40035F-TB-ND
WolfspeedBOARD DEMO AMP CIRCUIT CGH40035
RoHS: Compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$550.0000
CGH40035F
DISTI # 941-CGH40035F
Cree, Inc.RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
RoHS: Compliant
120
  • 1:$164.3400
CGH40035F-TB
DISTI # 941-CGH40035F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
1
  • 1:$550.0000
CGH40035FCree, Inc. 20
    CGH40035F
    DISTI # CGH40035F
    WolfspeedRF POWER TRANSISTOR
    RoHS: Compliant
    120
    • 1:$164.3400
    CGH40035F-TB
    DISTI # CGH40035F-TB
    WolfspeedRF TRANSISTOR TEST FIXTURE
    RoHS: Compliant
    2
    • 2:$550.0000
    Bild Teil # Beschreibung
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    OMO.#: OMO-CGH40120F

    RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
    CGH40035F-TB

    Mfr.#: CGH40035F-TB

    OMO.#: OMO-CGH40035F-TB

    RF Development Tools Test Board without GaN HEMT
    CGH40025F/P

    Mfr.#: CGH40025F/P

    OMO.#: OMO-CGH40025F-P-1190

    Neu und Original
    CGH40035F/P

    Mfr.#: CGH40035F/P

    OMO.#: OMO-CGH40035F-P-1190

    Neu und Original
    CGH40090

    Mfr.#: CGH40090

    OMO.#: OMO-CGH40090-1190

    Neu und Original
    CGH40180PP-TB

    Mfr.#: CGH40180PP-TB

    OMO.#: OMO-CGH40180PP-TB-WOLFSPEED

    BOARD DEMO AMP CIRCUIT CGH40180
    CGH40006S

    Mfr.#: CGH40006S

    OMO.#: OMO-CGH40006S-WOLFSPEED

    RF JFET Transistors DC-6GHz 28V 6W Gain 11.8dB GaN HEMT
    CGH40120F

    Mfr.#: CGH40120F

    OMO.#: OMO-CGH40120F-WOLFSPEED

    RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
    CGH40006P

    Mfr.#: CGH40006P

    OMO.#: OMO-CGH40006P-WOLFSPEED

    RF JFET Transistors DC-6GHz 28V 6W Gain 13dB GaN HEMT
    CGH492T350W5L

    Mfr.#: CGH492T350W5L

    OMO.#: OMO-CGH492T350W5L-CORNELL-DUBILIER-ELECTRONICS

    Aluminum Electrolytic Capacitors - Screw Terminal 4900uF 350V-10+50%
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von CGH40035F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    192,26 $
    192,26 $
    10
    182,64 $
    1 826,42 $
    100
    173,03 $
    17 302,95 $
    500
    163,42 $
    81 708,40 $
    1000
    153,80 $
    153 804,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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