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IRF6691TR1

IRF6691TR1
Mfr. #:
IRF6691TR1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 20V 32A DIRECTFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6691TR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRF669, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Diode; N-Channel; 20 V; +12 V; 1.8 Milliohms (Typ.); 2.8 W; DirectFET; -40 degC
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:26A; On-Resistance, Rds(on):2.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT; Applications:CTRL FET RoHS Compliant: No
***ernational Rectifier
A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only.
***ment14 APAC
MOSFET, N, DIRECTFET, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:6580pF; Current Id Max:32A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MT; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:260A; Reverse Recovery Time trr Typ:32ns; SMD Marking:6691; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRF6691TR1
DISTI # IRF6691TR1-ND		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6691TR1PBF
    DISTI # IRF6691TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6691TR1PBF
      DISTI # IRF6691TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6691TR1PBF
        DISTI # IRF6691TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 20V 32A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6691TR1PBF
          DISTI # 70018853          		Infineon Technologies AG20V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MT PACKAGE
          RoHS: Compliant          		0
          • 1000:$2.8800
          IRF6691TR1International Rectifier 43115
            IRF6691TR1International Rectifier 1000
              IRF6691TR1PBFInternational Rectifier 212
                IRF6691TR1PBFInternational Rectifier 447
                  IRF6691TR1International Rectifier*** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, SMT10
                  • 9:$2.2800
                  • 3:$3.0400
                  • 1:$4.5600
                  IRF6691TR1
                  DISTI # 1078427                  		Infineon Technologies AGMOSFET, N, DIRECTFET, MT
                  RoHS: Compliant                  		0
                  • 500:$3.9300
                  • 1000:$3.9300
                  • 250:$4.1400
                  • 100:$4.3000
                  • 10:$4.7500
                  • 1:$5.0600
                  IRF6691TR1PBF
                  DISTI # 1436936                  		Infineon Technologies AGMOSFET, N, DIRECTFET, 20V, MT
                  RoHS: Compliant                  		0
                  • 500:$3.9300
                  • 1000:$3.9300
                  • 250:$4.1400
                  • 100:$4.3000
                  • 10:$4.7500
                  • 1:$5.0600
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                  Verfügbarkeit
                  Aktie:
                  Available
                  Auf Bestellung:
                  1500
                  Menge eingeben:
                  Der aktuelle Preis von IRF6691TR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                  Referenzpreis (USD)
                  Menge
                  Stückpreis
                  ext. Preis
                  1
                  3,42 $
                  3,42 $
                  10
                  3,25 $
                  32,49 $
                  100
                  3,08 $
                  307,80 $
                  500
                  2,91 $
                  1 453,50 $
                  1000
                  2,74 $
                  2 736,00 $
                  Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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