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IRFR1018EPBF

IRFR1018EPBF
Mfr. #:
IRFR1018EPBF
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR1018EPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
110 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
79 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Widerstand
7.1 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
46 nC
Tags
IRFR1018, IRFR10, IRFR1, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:DPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFR1018EPBF
DISTI # 27615553		Infineon Technologies AGTrans MOSFET N-CH Si 60V 79A 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant		2618
  • 3000:$0.6395
  • 1000:$0.7217
  • 500:$0.9138
  • 100:$1.0395
  • 22:$1.3464
IRFR1018EPBF
DISTI # IRFR1018EPBF-ND		Infineon Technologies AGMOSFET N-CH 60V 79A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRFR1018EPBF
    DISTI # SP001567496    		Infineon Technologies AGTrans MOSFET N-CH 60V 79A 3-Pin(2+Tab) DPAK (Alt: SP001567496)
    RoHS: Compliant
    Min Qty: 1    		Europe - 575
    • 1000:€0.4779
    • 500:€0.4869
    • 100:€0.5009
    • 50:€0.5109
    • 25:€0.5859
    • 10:€0.7019
    • 1:€0.8369
    IRFR1018EPBF
    DISTI # IRFR1018EPBF    		Infineon Technologies AGTrans MOSFET N-CH 60V 79A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR1018EPBF)
    Min Qty: 511
    Container: Bulk    		Americas - 0
    • 5110:$0.6229
    • 2555:$0.6349
    • 1533:$0.6599
    • 1022:$0.6859
    • 511:$0.7149
    IRFR1018EPBF.
    DISTI # 27AC6813    		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
      IRFR1018EPBF
      DISTI # 70017888      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 7.1Milliohms,ID 56A,D-Pak,PD 110W,VGS +/-20
      RoHS: Compliant      		0
      • 5:$1.4600
      IRFR1018EPBF
      DISTI # 942-IRFR1018EPBF      		Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
      RoHS: Compliant      		3378
      • 1:$1.6000
      • 10:$1.3600
      • 100:$1.0500
      • 500:$0.9230
      • 1000:$0.7290
      IRFR1018EPBFInfineon Technologies AGPower Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		2172
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.7900
      IRFR1018EPBFInternational RectifierPower Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		5785
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.7900
      IRFR1018EPBF
      DISTI # 6887024      		Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET DPAK, PK395
      • 250:£0.7440
      • 100:£0.7600
      • 50:£0.8760
      • 25:£0.9900
      • 5:£1.2400
      IRFR1018EPBF
      DISTI # 6887024P      		Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET DPAK, TU275
      • 250:£0.7440
      • 100:£0.7600
      • 50:£0.8760
      • 25:£0.9900
      IRFR1018EPBFInternational Rectifier 256
        IRFR1018EPBF
        DISTI # IRFR1018EPBF        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,79A,110W,DPAK362
        • 1:$0.9200
        • 3:$0.8200
        • 10:$0.6700
        • 75:$0.5900
        IRFR1018EPBF
        DISTI # 1602229        		Infineon Technologies AGMOSFET, N, D-PAK
        RoHS: Compliant        		0
        • 1000:$1.1300
        • 500:$1.4200
        • 100:$1.6200
        • 10:$2.1000
        • 1:$2.4600
        IRFR1018EPBF
        DISTI # IRFR1018EPBF        		Infineon Technologies AGN-Ch 60V 56A 110W 0,0084R TO252AA
        RoHS: Compliant        		600
        • 75:€0.5590
        • 150:€0.4990
        • 300:€0.4690
        • 600:€0.4515
        IRFR1018ETRPBF
        DISTI # IRFR1018EPBF-GURT        		Infineon Technologies AGN-Ch 60V 56A 110W 0,0084R TO252AA
        RoHS: Compliant        		2650
        • 50:€0.4745
        • 100:€0.4345
        • 500:€0.4145
        • 3000:€0.3990
        Bild Teil # Beschreibung
        IRFR1010ZPBF

        Mfr.#: IRFR1010ZPBF

        OMO.#: OMO-IRFR1010ZPBF

        		 MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
        IRFR1018ETRPBF-CUT TAPE

        Mfr.#: IRFR1018ETRPBF-CUT TAPE

        OMO.#: OMO-IRFR1018ETRPBF-CUT-TAPE-1190

        		 Neu und Original
        IRFR1010ZTRL

        Mfr.#: IRFR1010ZTRL

        OMO.#: OMO-IRFR1010ZTRL-1190

        		 Neu und Original
        IRFR1010Z FR1010Z

        Mfr.#: IRFR1010Z FR1010Z

        OMO.#: OMO-IRFR1010Z-FR1010Z-1190

        		 Neu und Original
        IRFR1010ZTRRPBF

        Mfr.#: IRFR1010ZTRRPBF

        OMO.#: OMO-IRFR1010ZTRRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 55V 42A DPAK
        IRFR1018EPBF

        Mfr.#: IRFR1018EPBF

        OMO.#: OMO-IRFR1018EPBF-INFINEON-TECHNOLOGIES

        		 Darlington Transistors MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
        IRFR1010ZPBF

        Mfr.#: IRFR1010ZPBF

        OMO.#: OMO-IRFR1010ZPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 55V 42A DPAK
        IRFR1018E

        Mfr.#: IRFR1018E

        OMO.#: OMO-IRFR1018E-1190

        		 Neu und Original
        IRFR1018ETRPBF,FR1018E,I

        Mfr.#: IRFR1018ETRPBF,FR1018E,I

        OMO.#: OMO-IRFR1018ETRPBF-FR1018E-I-1190

        		 Neu und Original
        IRFR1010ZTRPBF

        Mfr.#: IRFR1010ZTRPBF

        OMO.#: OMO-IRFR1010ZTRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2000
        Menge eingeben:
        Der aktuelle Preis von IRFR1018EPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,77 $
        0,77 $
        10
        0,73 $
        7,31 $
        100
        0,69 $
        69,26 $
        500
        0,65 $
        327,10 $
        1000
        0,62 $
        615,70 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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