IRFR1010ZPBF

IRFR1010ZPBF
Mfr. #:
IRFR1010ZPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 42A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR1010ZPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
140 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
48 ns
Anstiegszeit
76 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
91 A
Vds-Drain-Source-Breakdown-Voltage
55 V
Rds-On-Drain-Source-Widerstand
7.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
42 ns
Typische-Einschaltverzögerungszeit
17 ns
Qg-Gate-Ladung
63 nC
Kanal-Modus
Erweiterung
Tags
IRFR1010, IRFR10, IRFR1, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ure Electronics
Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - DPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:360A; SMD Marking:IRFR1010ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFR1010ZPBF
DISTI # IRFR1010ZPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 42A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRFR1010ZPBF
    DISTI # IRFR1010ZPBF
    Infineon Technologies AGTrans MOSFET N-CH 55V 91A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: IRFR1010ZPBF)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube
    Americas - 100
      IRFR1010ZPBF
      DISTI # 31K1960
      Infineon Technologies AGN CHANNEL MOSFET, 55V, 42A, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
      • 1:$1.5100
      • 10:$1.2900
      • 100:$0.9840
      • 500:$0.8700
      • 1000:$0.6870
      • 5000:$0.6090
      IRFR1010ZPBF.
      DISTI # 29AC7057
      Infineon Technologies AGN CHANNEL MOSFET, 55V, 42A, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
        IRFR1010ZPBF
        DISTI # 70017236
        Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 5.8 Milliohms,ID 42A,D-Pak (TO-252AA),-55deg
        RoHS: Compliant
        0
        • 1:$2.2100
        • 1200:$1.9500
        IRFR1010ZPBF
        DISTI # 942-IRFR1010ZPBF
        Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
        RoHS: Compliant
        828
        • 1:$1.5100
        • 10:$1.2900
        • 100:$0.9840
        • 500:$0.8700
        • 1000:$0.6870
        IRFR1010ZPBF
        DISTI # 8655825P
        Infineon Technologies AGMOSFET N-CH 55V 91A HEXFET DPAK, TU20
        • 100:£0.7120
        • 250:£0.6700
        • 500:£0.6300
        • 1050:£0.4980
        IRFR1010ZPBF
        DISTI # IRFR1010ZPBF
        Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,91A,140W,DPAK150
        • 1:$1.2900
        • 3:$1.1700
        • 10:$0.9600
        • 75:$0.8300
        IRFR1010ZPBF
        DISTI # IRFR1010ZPBF
        Infineon Technologies AGN-Ch 55V 42A 140W 0,0075R TO252AA
        RoHS: Compliant
        250
        • 75:€0.6730
        • 150:€0.5730
        • 300:€0.5230
        • 600:€0.5035
        IRFR1010ZTRPBF
        DISTI # IRFR1010ZPBF-GURT
        Infineon Technologies AGN-Ch 55V 42A 140W 0,0075R TO252AA
        RoHS: Compliant
        0
        • 50:€0.6265
        • 100:€0.5665
        • 500:€0.5365
        • 3000:€0.5165
        IRFR1010ZPBF
        DISTI # 1013382
        Infineon Technologies AGMOSFET, N, D-PAK
        RoHS: Compliant
        0
        • 1:$2.4000
        • 10:$2.0400
        • 100:$1.5600
        • 500:$1.3800
        • 1000:$1.1000
        • 3000:$0.9930
        Bild Teil # Beschreibung
        IRFR1018ETRPBF

        Mfr.#: IRFR1018ETRPBF

        OMO.#: OMO-IRFR1018ETRPBF

        MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
        IRFR1010ZTRPBF

        Mfr.#: IRFR1010ZTRPBF

        OMO.#: OMO-IRFR1010ZTRPBF

        MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
        IRFR1018EPBF

        Mfr.#: IRFR1018EPBF

        OMO.#: OMO-IRFR1018EPBF

        MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
        IRFR1010ZTRLPBF

        Mfr.#: IRFR1010ZTRLPBF

        OMO.#: OMO-IRFR1010ZTRLPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 55V 42A DPAK
        IRFR1010ZTRL

        Mfr.#: IRFR1010ZTRL

        OMO.#: OMO-IRFR1010ZTRL-1190

        Neu und Original
        IRFR1010Z FR1010Z

        Mfr.#: IRFR1010Z FR1010Z

        OMO.#: OMO-IRFR1010Z-FR1010Z-1190

        Neu und Original
        IRFR1010ZTRRPBF

        Mfr.#: IRFR1010ZTRRPBF

        OMO.#: OMO-IRFR1010ZTRRPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 55V 42A DPAK
        IRFR1018ETRRPBF

        Mfr.#: IRFR1018ETRRPBF

        OMO.#: OMO-IRFR1018ETRRPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 60V 79A DPAK
        IRFR1018EPBF

        Mfr.#: IRFR1018EPBF

        OMO.#: OMO-IRFR1018EPBF-INFINEON-TECHNOLOGIES

        Darlington Transistors MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
        IRFR1010ZPBF

        Mfr.#: IRFR1010ZPBF

        OMO.#: OMO-IRFR1010ZPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 55V 42A DPAK
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von IRFR1010ZPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,86 $
        0,86 $
        10
        0,82 $
        8,15 $
        100
        0,77 $
        77,24 $
        500
        0,73 $
        364,75 $
        1000
        0,69 $
        686,60 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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