STGD6M65DF2

Mfr. #:: STGD6M65DF2
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors PTD HIGH VOLTAGE
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGD6M65DF2 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STGD6M65DF2 Mehr Informationen STGD6M65DF2 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: DPAK-3

Montageart:: SMD/SMT

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 650 V

Kollektor-Emitter-Sättigungsspannung:: 1.55 V

Maximale Gate-Emitter-Spannung:: 20 V

Kontinuierlicher Kollektorstrom bei 25 C:: 12 A

Pd - Verlustleistung:: 88 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Serie:: STGD6M65DF2

Verpackung:: Spule

Kontinuierlicher Kollektorstrom Ic Max:: 12 A

Marke:: STMicroelectronics

Gate-Emitter-Leckstrom:: +/- 250 uA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 2500

Unterkategorie:: IGBTs

Tags: STGD6, STGD, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGD6M65DF2 Beschreibung

***r Electronics: Insulated Gate Bipolar Transistor, 12A I(C), 650V V(BR)CES, N-Channel, TO-252

***icroelectronics: Trench gate field-stop IGBT, M series 650 V, 6 A low loss

***ical: Trans IGBT Chip N-CH 650V 12A 88000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: IGBT Trench Field Stop 650 V 12 A 88 W Surface Mount DPAK

*** Electronic Components: IGBT Transistors PTD HIGH VOLTAGE

STGD6M65DF2 Mehr Informationen

STM 650V M Series Trench Gate Field-Stop IGBTs: STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGD6M65DF2 DISTI # 497-16966-2-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.5406 2500:$0.5644
STGD6M65DF2 DISTI # 497-16966-1-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.6181 500:$0.7652 100:$0.9122 10:$1.1520 1:$1.2800
STGD6M65DF2 DISTI # 497-16966-6-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.6181 500:$0.7652 100:$0.9122 10:$1.1520 1:$1.2800
STGD6M65DF2 DISTI # STGD6M65DF2	STMicroelectronics	Trans IGBT Chip N 650V 12A 3-Pin DPAK T/R - Bulk (Alt: STGD6M65DF2) RoHS: Compliant Min Qty: 2500 Container: Bulk	Americas - 0	2500:$0.5089 5000:$0.4849 10000:$0.4629 15000:$0.4429 25000:$0.4339
STGD6M65DF2 DISTI # 511-STGD6M65DF2	STMicroelectronics	IGBT Transistors PTD HIGH VOLTAGE RoHS: Compliant	0	1:$1.1200 10:$0.9520 100:$0.7320 500:$0.6470 1000:$0.5100 2500:$0.4530
STGD6M65DF2 DISTI # IGBT2169	STMicroelectronics	IGBT650V6A1.9VDPAK RoHS: Compliant	Stock DE - 0Stock US - 0	2500:$0.6141 5000:$0.5763 7500:$0.5574

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: STGD6M65DF2 OMO.#: OMO-STGD6M65DF2	IGBT Transistors PTD HIGH VOLTAGE
	Mfr.#: STGD6NC60H-1 OMO.#: OMO-STGD6NC60H-1	IGBT Transistors N-channel 600 V, 7 A very fast IGBT
	Mfr.#: STGD6NC60HDT4 OMO.#: OMO-STGD6NC60HDT4	IGBT Transistors PowerMESH&#34 IGBT
	Mfr.#: STGD6NC60HDT4 OMO.#: OMO-STGD6NC60HDT4-STMICROELECTRONICS	IGBT 600V 15A 56W DPAK
	Mfr.#: STGD6NC60H-1 OMO.#: OMO-STGD6NC60H-1-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGD6NC60HDT4-CUT TAPE OMO.#: OMO-STGD6NC60HDT4-CUT-TAPE-1190	Neu und Original
	Mfr.#: STGD6N60 OMO.#: OMO-STGD6N60-1190	Neu und Original
	Mfr.#: STGD6NC60HT4 OMO.#: OMO-STGD6NC60HT4-STMICROELECTRONICS	IGBT 600V 15A 56W DPAK
	Mfr.#: STGD6NC60H_07 OMO.#: OMO-STGD6NC60H-07-1190	Neu und Original
	Mfr.#: STGD6NC6HDT4 OMO.#: OMO-STGD6NC6HDT4-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von STGD6M65DF2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,11 $~~; ~~1,11 $~~

10: ~~0,95 $~~; ~~9,52 $~~

100: ~~0,73 $~~; ~~73,20 $~~

500: ~~0,65 $~~; ~~323,50 $~~

1000: ~~0,51 $~~; ~~510,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

STGD6 11
STGD 81
STG 909

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STGD6M65DF2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes