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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFP4N05LP2158 | HARTING Technology Group | RoHS: Not Compliant | Europe - 812 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFP40N10 |
MOSFET N-CH 100V 40A TO-220AB |
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Mfr.#: RFP45006 OMO.#: OMO-RFP45006-1190 |
Neu und Original |
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Mfr.#: RFP45N02L OMO.#: OMO-RFP45N02L-1190 |
Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP45N03L OMO.#: OMO-RFP45N03L-1190 |
Power Field-Effect Transistor, 45A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP45N06-H8 OMO.#: OMO-RFP45N06-H8-1190 |
Neu und Original |
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Mfr.#: RFP460APBF OMO.#: OMO-RFP460APBF-1190 |
Neu und Original |
|
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Mfr.#: RFP4N05 OMO.#: OMO-RFP4N05-1190 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N05LP2158 OMO.#: OMO-RFP4N05LP2158-1190 |
Neu und Original |
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Mfr.#: RFP4N100 |
MOSFET N-CH 1KV 4.3A TO-220AB |
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Mfr.#: RFP4N40 OMO.#: OMO-RFP4N40-1190 |
Power Field-Effect Transistor, 4A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |