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STI33N60M2

STI33N60M2
Mfr. #:
STI33N60M2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STI33N60M2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STI33N60M2 Mehr Informationen STI33N60M2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
26 A
Rds On - Drain-Source-Widerstand:
125 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
45.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
190 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Rohr
Serie:
STI33N60M2
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
9.6 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
109 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.073511 oz
Tags
STI3, STI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    F***u
    F***u
    TR

    All of arduino clones I bought have not a bootloader to communicate with IDE. With this USBASP i burned bootloader with error. Yes Arduino IDE gave an error but it worked. I recommend it.

    2019-02-23
    T***k
    T***k
    CZ

    For here cenu Pecka. Připojeno K 12 V battery, and s použitím kvalitnějších reproduktorů SONY, PIONEER, BOSE tvoří křišťálově čistý zvuk. Balení nebylo dobře zabalené but zásilka nebyla nohow poškozena. Vhodné pro DIY Bluetooth stud and podobně. Doporučuji tento obchod.

    2019-01-31
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
***et
Trans MOSFET N-CH 600V 26A 3-Pin I2PAK Tube
***ark
Ptd High Voltage
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STI33N60M2
DISTI # 497-15016-5-ND		STMicroelectronicsMOSFET N-CH 600V 26A I2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		987In Stock
  • 5000:$1.8547
  • 2500:$1.9272
  • 500:$2.4053
  • 100:$2.8256
  • 50:$3.2602
  • 10:$3.4490
  • 1:$3.8400
STI33N60M2
DISTI # STI33N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 26A 3-Pin I2PAK Tube (Alt: STI33N60M2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 100:€1.7900
  • 500:€1.7900
  • 1000:€1.7900
  • 25:€1.8900
  • 50:€1.8900
  • 1:€1.9900
  • 10:€1.9900
STI33N60M2
DISTI # STI33N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 26A 3-Pin I2PAK Tube - Rail/Tube (Alt: STI33N60M2)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 5000:$1.6900
  • 10000:$1.6900
  • 3000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
STI33N60M2
DISTI # 79X6458		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$1.8000
  • 250:$1.8500
  • 100:$2.2100
  • 50:$2.5600
  • 25:$2.7200
  • 10:$3.1100
  • 1:$3.5900
STI33N60M2
DISTI # 511-STI33N60M2		STMicroelectronicsMOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
RoHS: Compliant		990
  • 1:$3.6500
  • 10:$3.1000
  • 100:$2.6900
  • 250:$2.5500
  • 500:$2.2900
  • 1000:$1.9300
  • 2000:$1.8300
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Mfr.#: IX4427N

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Verfügbarkeit
Aktie:
988
Auf Bestellung:
2971
Menge eingeben:
Der aktuelle Preis von STI33N60M2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,65 $
3,65 $
10
3,10 $
31,00 $
100
2,69 $
269,00 $
250
2,55 $
637,50 $
500
2,29 $
1 145,00 $
1000
1,93 $
1 930,00 $
2000
1,83 $
3 660,00 $
5000
1,76 $
8 800,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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