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BSC090N03LSGATMA1

BSC090N03LSGATMA1
Mfr. #:
BSC090N03LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 48A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC090N03LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
BSC090N03
Verpackung
Spule
Teil-Aliasnamen
BSC090N03LS BSC090N03LSGXT G SP000275115
Handelsname
OptiMOS
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Transistor-Polarität
N-Kanal
Tags
BSC090N03LSG, BSC090N03L, BSC090N, BSC090, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 9 mOhm 14 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Product Range:- Rohs Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
BSC090N03LSGATMA1
DISTI # V72:2272_06390968		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON T/R
RoHS: Compliant		3300
  • 3000:$0.2230
  • 1000:$0.2478
  • 500:$0.2979
  • 250:$0.3011
  • 100:$0.3044
  • 25:$0.4237
  • 10:$0.4289
  • 1:$0.4935
BSC090N03LSGATMA1
DISTI # BSC090N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 48A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3140In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC090N03LSGATMA1
DISTI # BSC090N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 48A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3140In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC090N03LSGATMA1
DISTI # BSC090N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 48A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC090N03LSGATMA1
DISTI # 26195689		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON T/R
RoHS: Compliant		3300
  • 3000:$0.2230
  • 1000:$0.2478
  • 500:$0.2979
  • 250:$0.3011
  • 100:$0.3044
  • 35:$0.4237
BSC090N03LSGATMA1
DISTI # BSC090N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 10000
  • 5000:$0.2399
  • 10000:$0.2389
  • 20000:$0.2379
  • 30000:$0.2379
  • 50000:$0.2369
BSC090N03LSGATMA1.
DISTI # 31AC8219		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:32W,No. of Pins:8Pins0
  • 1:$0.2370
  • 10000:$0.2280
  • 20000:$0.2240
  • 30000:$0.2200
  • 50000:$0.2170
BSC090N03LSGATMA1Infineon Technologies AGSingle N-Channel 30 V 9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		200Cut Tape/Mini-Reel
  • 1:$0.3650
  • 100:$0.3150
  • 250:$0.3050
  • 500:$0.3000
  • 1500:$0.2800
BSC090N03LS G
DISTI # 726-BSC090N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
RoHS: Compliant		25374
  • 1:$0.6800
  • 10:$0.5620
  • 100:$0.3630
  • 1000:$0.2910
BSC090N03LSGATMA1
DISTI # 726-BSC090N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
RoHS: Compliant		4950
  • 1:$0.6800
  • 10:$0.5620
  • 100:$0.3630
  • 1000:$0.2910
BSC090N03LSGATMA1
DISTI # 1775458		Infineon Technologies AGMOSFET, N CH, 48A, 30V, PG-TDSON-8
RoHS: Compliant		4553
  • 5:£0.4850
  • 25:£0.4480
  • 100:£0.2780
  • 250:£0.2590
  • 500:£0.2410
BSC090N03LSGATMA1
DISTI # C1S322000595899		Infineon Technologies AGMOSFETs
RoHS: Compliant		3300
  • 250:$0.3113
  • 100:$0.3121
  • 25:$0.4304
  • 10:$0.4324
Bild Teil # Beschreibung
BSC090N03LS G

Mfr.#: BSC090N03LS G

OMO.#: OMO-BSC090N03LS-G

 MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
BSC090N03MS G

Mfr.#: BSC090N03MS G

OMO.#: OMO-BSC090N03MS-G

 MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC090N03MSGATMA1

Mfr.#: BSC090N03MSGATMA1

OMO.#: OMO-BSC090N03MSGATMA1

 MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC090N03LS

Mfr.#: BSC090N03LS

OMO.#: OMO-BSC090N03LS-1190

 Neu und Original
BSC090N03LS G

Mfr.#: BSC090N03LS G

OMO.#: OMO-BSC090N03LS-G-1190

 Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G)
BSC090N03LSGATMA1

Mfr.#: BSC090N03LSGATMA1

OMO.#: OMO-BSC090N03LSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 48A TDSON-8
BSC090N03MS

Mfr.#: BSC090N03MS

OMO.#: OMO-BSC090N03MS-1190

 Transistor: N-MOSFET, unipolar, 30V, 43A, 32W, PG-TDSON-8
BSC090N03MS G

Mfr.#: BSC090N03MS G

OMO.#: OMO-BSC090N03MS-G-1190

 Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC090N03MS G)
BSC090N03MSG

Mfr.#: BSC090N03MSG

OMO.#: OMO-BSC090N03MSG-1190

 Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC090N03MSGATMA1 , TDZ

Mfr.#: BSC090N03MSGATMA1 , TDZ

OMO.#: OMO-BSC090N03MSGATMA1-TDZ-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von BSC090N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,33 $
0,33 $
10
0,32 $
3,18 $
100
0,30 $
30,11 $
500
0,28 $
142,15 $
1000
0,27 $
267,60 $
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