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| PartNumber | BSC090N03LS G | BSC090N03MS G | BSC090N03LSGATMA1 |
| Description | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 48 A | 48 A | 48 A |
| Rds On Drain Source Resistance | 7.5 mOhms | 7.5 mOhms | 7.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 18 nC | 24 nC | 18 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 32 W | 32 W | 32 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3M | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 28 S | 28 S | 28 S |
| Fall Time | 2.4 ns | 5.4 ns | 2.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.6 ns | 5 ns | 2.6 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 8.8 ns | 14 ns |
| Typical Turn On Delay Time | 3.1 ns | 9 ns | 3.1 ns |
| Part # Aliases | BSC090N03LSGATMA1 BSC9N3LSGXT SP000275115 | BSC090N03MSGATMA1 BSC9N3MSGXT SP000313120 | BSC090N03LS BSC9N3LSGXT G SP000275115 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC090N03LS G | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | |
| BSC090N03MS G | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | ||
| BSC090N03MSGATMA1 | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | ||
| BSC090N03LSGATMA1 | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | ||
| BSC090N03MSGXT | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | ||
| BSC090N03LSGATMA1 | MOSFET N-CH 30V 48A TDSON-8 | ||
| BSC090N03MSGATMA1 | MOSFET N-CH 30V 48A TDSON-8 | ||
| BSC090N03LS | Neu und Original | ||
| BSC090N03LS G | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G) | ||
| BSC090N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC090N03MS | Transistor: N-MOSFET, unipolar, 30V, 43A, 32W, PG-TDSON-8 | ||
| BSC090N03MS G | Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC090N03MS G) | ||
| BSC090N03MSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC090N03MSG 48A 30V | Neu und Original | ||
| BSC090N03MSGATMA1 , TDZ | Neu und Original | ||
| BSC090N03MSGXT | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | ||
| BSC090N03LSGATMA1-CUT TAPE | Neu und Original | ||
| BSC090N03MSGATMA1-CUT TAPE | Neu und Original |