IXA55I1200HJ

IXA55I1200HJ
Mfr. #:
IXA55I1200HJ
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors XPT 1200V 84A Single IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXA55I1200HJ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXA55I1200HJ DatasheetIXA55I1200HJ Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXA55I1200HJ Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
ISOPLUS 247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
84 A
Pd - Verlustleistung:
290 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXA55I1200HJ
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
54 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
500 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
0.186952 oz
Tags
IXA55, IXA5, IXA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 84A 290000mW 3-Pin(3+Tab) ISOPLUS 247
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 84A 3-Pin(3+Tab) ISOPLUS 247
***Components
In a Tube of 30, IXYS IXA55I1200HJ IGBT
***i-Key
IGBT 1200V 84A 290W TO247
***ukat
1200V 84A 290W TO247-Isoplus
***ark
Xpt Igbt Copack, 1200V, 84A, Isoplus247; Dc Collector Current:84A; Collector Emitter Saturation Voltage Vce(On):1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes
***nell
IGBT,1200V,84A,ISOPLUS247; Transistor Type:IGBT; DC Collector Current:84A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Max:290W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:ISOPLUS-247; No. of Pins:3
***ment14 APAC
IGBT,1200V,84A,ISOPLUS247; Transistor Type:IGBT; DC Collector Current:84A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ISOPLUS-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:290W
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXA55I1200HJ
DISTI # V99:2348_15877304
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 84A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
30
  • 25:$10.7500
  • 10:$11.5770
  • 1:$12.6420
IXA55I1200HJ
DISTI # IXA55I1200HJ-ND
IXYS CorporationIGBT 1200V 84A 290W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$12.3737
IXA55I1200HJ
DISTI # 20128290
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 84A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
120
  • 30:$11.3184
IXA55I1200HJ
DISTI # 29529446
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 84A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
30
  • 25:$10.7500
  • 10:$11.5770
  • 1:$12.6420
IXA55I1200HJ
DISTI # 747-IXA55I1200HJ
IXYS CorporationIGBT Transistors XPT 1200V 84A Single IGBT
RoHS: Compliant
43
  • 1:$14.0100
  • 10:$12.7400
  • 25:$11.7900
  • 50:$11.1000
  • 100:$10.8300
  • 250:$9.8700
  • 500:$9.2400
IXA55I1200HJ
DISTI # 8080219
IXYS CorporationIGBT N-CH 1200V 84A XPT ISOPLUS247, EA5
  • 1:£10.3600
  • 5:£9.6300
  • 10:£9.2200
  • 30:£8.8300
  • 90:£8.3900
IXA55I1200HJ
DISTI # 8080219P
IXYS CorporationIGBT N-CH 1200V 84A XPT ISOPLUS247, TU38
  • 5:£9.6300
  • 10:£9.2200
  • 30:£8.8300
  • 90:£8.3900
IXA55I1200HJ
DISTI # IXA55I1200HJ
IXYS Corporation1200V 84A 290W TO247-Isoplus
RoHS: Compliant
15
  • 1:€11.7000
  • 5:€8.7000
  • 30:€7.7000
  • 60:€7.4000
IXA55I1200HJ
DISTI # C1S331700110215
IXYS CorporationTrans IGBT Chip N-CH 1200V 84A 290000mW 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
30
  • 25:$10.7500
  • 10:$11.5770
  • 1:$12.6420
IXA55I1200HJ
DISTI # 1829726
IXYS CorporationIGBT,1200V,84A,ISOPLUS247
RoHS: Compliant
2
  • 1:£11.0700
  • 5:£10.6000
  • 10:£8.9200
  • 50:£8.7400
  • 100:£8.5600
Bild Teil # Beschreibung
24LC512-E/SN

Mfr.#: 24LC512-E/SN

OMO.#: OMO-24LC512-E-SN

EEPROM 512K 64K X 8 2.5V SER EE EXT
2N3417

Mfr.#: 2N3417

OMO.#: OMO-2N3417

Bipolar Transistors - BJT NPN 50V 500mA BULK HFE/540
BZX55C5V6-TAP

Mfr.#: BZX55C5V6-TAP

OMO.#: OMO-BZX55C5V6-TAP

Zener Diodes 5.6 Volt 0.5W 5%
IXA37IF1200HJ

Mfr.#: IXA37IF1200HJ

OMO.#: OMO-IXA37IF1200HJ

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
IXGR48N60B3D1

Mfr.#: IXGR48N60B3D1

OMO.#: OMO-IXGR48N60B3D1

IGBT Transistors 48 Amps 600V 1.7 Rds
IXDR35N60BD1

Mfr.#: IXDR35N60BD1

OMO.#: OMO-IXDR35N60BD1

IGBT Transistors 35 Amps 600V
77208C

Mfr.#: 77208C

OMO.#: OMO-77208C-MURATA-POWER-SOLUTIONS

PULSE TRANSFORMER 1:1:1 460VUS
CCF55100KFKE36

Mfr.#: CCF55100KFKE36

OMO.#: OMO-CCF55100KFKE36-VISHAY

Metal Film Resistors - Through Hole 1/4watt 100Kohms 1% Rated to 1/2watt
CCF5510K0FKE36

Mfr.#: CCF5510K0FKE36

OMO.#: OMO-CCF5510K0FKE36-VISHAY

Metal Film Resistors - Through Hole 1/4watt 10Kohms 1% Rated to 1/2watt
2N3417

Mfr.#: 2N3417

OMO.#: OMO-2N3417-CENTRAL-SEMICONDUCTOR

Bipolar Transistors - BJT NPN 50V 500mA BULK HFE/540
Verfügbarkeit
Aktie:
29
Auf Bestellung:
2012
Menge eingeben:
Der aktuelle Preis von IXA55I1200HJ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,01 $
14,01 $
10
12,74 $
127,40 $
25
11,79 $
294,75 $
50
11,10 $
555,00 $
100
10,83 $
1 083,00 $
250
9,87 $
2 467,50 $
500
9,24 $
4 620,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top