DZT5551-13

Mfr. #:: DZT5551-13
Hersteller:: Diodes Incorporated
Beschreibung:: Bipolar Transistors - BJT 1000mW 160Vceo
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DZT5551-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Eingebaute Dioden

Produktkategorie: Transistoren (BJT) - Single

Serie: DZT5551

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.000282 oz

Montageart: SMD/SMT

Paket-Koffer: TO-261-4, TO-261AA

Befestigungsart: Oberflächenmontage

Lieferanten-Geräte-Paket: SOT-223

Aufbau: Single

Leistung max: 1W

Transistor-Typ: NPN

Strom-Kollektor-Ic-Max: 600mA

Spannungs-Kollektor-Emitter-Breakdown-Max: 160V

DC-Strom-Verstärkung-hFE-Min-Ic-Vce: 80 @ 10mA, 5V

Vce-Sättigung-Max-Ib-Ic: 200mV @ 5mA, 50mA

Strom-Kollektor-Abschalt-Max: 50nA (ICBO)

Frequenz-Übergang: 300MHz

Pd-Verlustleistung: 1000 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Kollektor-Emitter-Spannung-VCEO-Max: 160 V

Transistor-Polarität: NPN

Kollektor-Emitter-Sättigungsspannung: 200 mV

Kollektor-Basis-Spannung-VCBO: 180 V

Emitter-Basis-Spannung-VEBO: 6 V

Maximaler-DC-Kollektor-Strom: 600 mA

Gain-Bandwidth-Product-fT: 300 MHz

DC-Kollektor-Basis-Gain-hfe-Min: 30 at 50 mA 5 V

Tags: DZT55, DZT5, DZT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DZT5551-13 Beschreibung

***ical: Trans GP BJT NPN 160V 0.6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: DZT5551 Series NPN 160 V 0.6 A Surface Mount Voltage Transistor - SOT-223

***p One Stop Global: Trans GP BJT NPN 160V 0.6A 4-Pin(3+Tab) SOT-223 T/R

***ied Electronics & Automation: GP BJT NPN 160V 0.6A 4Pin(3+Tab) SOT223

***ronik: NPN TRANSISTOR 160V 0,6A SOT223

***i-Key: TRANS NPN 160V 0.6A SOT-223

***Components: 通用双极 NPN，160V，0.6A，4引脚

***ark: Trans, Npn, 160V, 0.6A, 150Deg C, 2W; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:160V; Transition Frequency Ft:130Mhz; Power Dissipation Pd:2W; Dc Collector Current:600Ma; Dc Current Gain Hfe:30Hfe; Transistor Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANS, NPN, 160V, 0.6A, 150DEG C, 2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:130MHz; Power Dissipation Pd:2W; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: TRANSISTOR, NPN, 160V, 0.6A, 150°C, 2W; Polarità Transistor:NPN; Tensione Collettore-Emettitore V(br)ceo:160V; Frequenza di Transizione ft:130MHz; Dissipazione di Potenza Pd:2W; Corrente di Collettore CC:600mA; Guadagno di Corrente CC hFE:30hFE; Modello Case Transistor:SOT-223; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DZT5551-13 DISTI # DZT5551DICT-ND	Diodes Incorporated	TRANS NPN 160V 0.6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	408In Stock	1000:$0.1919 500:$0.2429 100:$0.3040 10:$0.4010 1:$0.4700
DZT5551-13 DISTI # DZT5551DIDKR-ND	Diodes Incorporated	TRANS NPN 160V 0.6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	408In Stock	1000:$0.1919 500:$0.2429 100:$0.3040 10:$0.4010 1:$0.4700
DZT5551-13 DISTI # DZT5551DITR-ND	Diodes Incorporated	TRANS NPN 160V 0.6A SOT-223 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.1447 12500:$0.1517 5000:$0.1615 2500:$0.1714
DZT5551-13 DISTI # DZT5551-13	Diodes Incorporated	Trans GP BJT NPN 160V 0.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: DZT5551-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	2500:€0.1079 5000:€0.1049 10000:€0.1029 15000:€0.1029 25000:€0.1019
DZT5551-13 DISTI # DZT5551-13	Diodes Incorporated	Trans GP BJT NPN 160V 0.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: DZT5551-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1079 5000:$0.1029 10000:$0.0979 15000:$0.0929 25000:$0.0909
DZT5551-13 DISTI # DZT5551-13	Diodes Incorporated	Trans GP BJT NPN 160V 0.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: DZT5551-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.1205 5000:$0.1152 7500:$0.1103 12500:$0.1073 25000:$0.1059 62500:$0.1031 125000:$0.1004
DZT5551-13 DISTI # 70438175	Diodes Incorporated	GP BJT NPN 160V 0.6A 4Pin(3+Tab) SOT223 RoHS: Compliant	0	125:$0.2700 625:$0.2400 1250:$0.2200 2500:$0.2000
DZT5551-13	Diodes Incorporated	DZT5551 Series NPN 160 V 0.6 A Surface Mount Voltage Transistor - SOT-223 RoHS: Compliant	2500Reel	2500:$0.1490 5000:$0.1450
DZT5551-13 DISTI # 621-DZT5551-13	Diodes Incorporated	Bipolar Transistors - BJT 1000mW 160Vceo RoHS: Compliant	10502	1:$0.4000 10:$0.3250 100:$0.1990 1000:$0.1540 2500:$0.1310
DZT5551-13 DISTI # 7514329P	Zetex / Diodes Inc	GP BJT NPN 160V 0.6A 4PIN(3+TAB) SOT223, RL	3300	1250:£0.0920 625:£0.1060 125:£0.1190
DZT5551-13 DISTI # 7514329	Zetex / Diodes Inc	GP BJT NPN 160V 0.6A 4PIN(3+TAB) SOT223, PK	850	1250:£0.0920 625:£0.1060 125:£0.1190 25:£0.2080
DZT5551-13 DISTI # XSFP00000045841	Diodes Incorporated	RoHS: Compliant	15000	15000:$0.2709 2500:$0.2980

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: DZT5551-13 OMO.#: OMO-DZT5551-13	Bipolar Transistors - BJT 1000mW 160Vceo
	Mfr.#: DZT5551 OMO.#: OMO-DZT5551-1190	TRANSISTOR, NPN, 160V, 0.6A, SOT223, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Transition Frequency ft:130MHz, Power Dissipation Pd:1W, DC Collector Current:600mA, DC Cur
	Mfr.#: DZT5551Q-13 OMO.#: OMO-DZT5551Q-13-DIODES	160V NPN VOLTAGE TRANSISTOR IN SOT223
	Mfr.#: DZT5551TA OMO.#: OMO-DZT5551TA-1190	Neu und Original
	Mfr.#: DZT5551-13 OMO.#: OMO-DZT5551-13-DIODES	Bipolar Transistors - BJT 1000mW 160Vceo

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von DZT5551-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,17 $~~; ~~0,17 $~~

10: ~~0,16 $~~; ~~1,57 $~~

100: ~~0,15 $~~; ~~14,89 $~~

500: ~~0,14 $~~; ~~70,30 $~~

1000: ~~0,13 $~~; ~~132,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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DZT5551-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes