DZT5

DZT5401-13 vs DZT5401 vs DZT5401-7-F

 
PartNumberDZT5401-13DZT5401DZT5401-7-F
DescriptionBipolar Transistors - BJT 1000mW -150Vceo
ManufacturerDiodes Incorporated-DIODES
Product CategoryBipolar Transistors - BJT-IC Chips
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 150 V--
Collector Base Voltage VCBO- 160 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 500 mV--
Maximum DC Collector Current- 600 mA--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDZT5401--
Height1.6 mm--
Length6.5 mm--
PackagingReel--
Width3.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min50 at - 1 mA, - 5 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DZT5551-13 Bipolar Transistors - BJT 1000mW 160Vceo
DZT5401-13 Bipolar Transistors - BJT 1000mW -150Vceo
DZT591C-13 Bipolar Transistors - BJT 1W -60V
DZT5401 Neu und Original
DZT5401-7-F Neu und Original
DZT5401TA Neu und Original
DZT5551 TRANSISTOR, NPN, 160V, 0.6A, SOT223, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Transition Frequency ft:130MHz, Power Dissipation Pd:1W, DC Collector Current:600mA, DC Cur
DZT5551Q-13 160V NPN VOLTAGE TRANSISTOR IN SOT223
DZT5551TA Neu und Original
DZT591 Neu und Original
DZT591C-13 Bipolar Transistors - BJT 1W -60V
DZT5401-13 Bipolar Transistors - BJT 1000mW -150Vceo
DZT5551-13 Bipolar Transistors - BJT 1000mW 160Vceo
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