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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI5902BDC-T1-E3 DISTI # V72:2272_09216236 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant | 1408 |
|
| SI5902BDC-T1-E3 DISTI # V36:1790_09216236 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant | 0 |
|
| SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3CT-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1835In Stock |
|
| SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1835In Stock |
|
| SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3TR-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI5902BDC-T1-E3 DISTI # 30316800 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant | 1408 |
|
| SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R (Alt: SI5902BDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI5902BDC-T1-E3 DISTI # 75M5527 | Vishay Intertechnologies | DUAL N-CH 30V (D-S) MOSFET ROHS COMPLIANT: YES | 0 |
|
| SI5902BDC-T1-E3 DISTI # 16P3794 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 30V, 1206,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:-RoHS Compliant: Yes | 0 |
|
| SI5902BDC-T1-E3 DISTI # 781-SI5902BDC-E3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant | 2513 |
|
| SI5902BDCT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6000 | |
| SI5902BDC-T1-E3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant | Americas - |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3 |
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET |
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Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3 |
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET |
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Mfr.#: SI5902DC-T1-E3 OMO.#: OMO-SI5902DC-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI5902BDC-E3 |
|
Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3-VISHAY |
IGBT Transistors MOSFET 30V 4.0A 3.12W |
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Mfr.#: SI5902DC-T1-E3 OMO.#: OMO-SI5902DC-T1-E3-VISHAY |
IGBT Transistors MOSFET 30V 3.9A 2.1W |
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Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY |
MOSFET 2N-CH 30V 4A 1206-8 |
|
Mfr.#: SI5902BDCT1E3 OMO.#: OMO-SI5902BDCT1E3-1190 |
Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI5902DC OMO.#: OMO-SI5902DC-1190 |
Neu und Original |
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Mfr.#: SI5902DC-T1 OMO.#: OMO-SI5902DC-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI5902BDC-E3 |
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Mfr.#: SI5902DY OMO.#: OMO-SI5902DY-1190 |
Neu und Original |