OMO ElectronicOMO Electronic
Expand menu
0 Wagen

T2G6000528-Q3 28V

T2G6000528-Q3 28V
Mfr. #:
T2G6000528-Q3 28V
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
T2G6000528-Q3 28V Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
T2G6000528-Q3 28V Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
TriQuint (Qorvo)
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
T2G
Verpackung
Tablett
Teil-Aliasnamen
1099997
Technologie
GaN SiC
Transistor-Typ
HEMT
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Teil # Mfg. Beschreibung Aktie Preis
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V		QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant		75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
Bild Teil # Beschreibung
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3

 RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6000528-Q3 28V

Mfr.#: T2G6000528-Q3 28V

OMO.#: OMO-T2G6000528-Q3-28V

 RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3 28V

Mfr.#: T2G6000528-Q3 28V

OMO.#: OMO-T2G6000528-Q3-28V-318

 RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3-1152

 RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6000528-Q3, EVAL BOAR

Mfr.#: T2G6000528-Q3, EVAL BOAR

OMO.#: OMO-T2G6000528-Q3-EVAL-BOAR-1190

 Neu und Original
T2G6000528-Q3-EVB3 3.0-3

Mfr.#: T2G6000528-Q3-EVB3 3.0-3

OMO.#: OMO-T2G6000528-Q3-EVB3-3-0-3-1190

 Neu und Original
T2G6000528-XCC-1-Q3

Mfr.#: T2G6000528-XCC-1-Q3

OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von T2G6000528-Q3 28V dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
86,40 $
86,40 $
10
82,08 $
820,80 $
100
77,76 $
7 776,00 $
500
73,44 $
36 720,00 $
1000
69,12 $
69 120,00 $
Beginnen mit
Top