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IXTP4N65X2

IXTP4N65X2
Mfr. #:
IXTP4N65X2
Hersteller:
Littelfuse
Beschreibung:
MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP4N65X2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXTP4N65X2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
850 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
8.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
80 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X2-Class
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
2.5 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
28 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
57 ns
Typische Einschaltverzögerungszeit:
22 ns
Gewichtseinheit:
0.012346 oz
Tags
IXTP4N6, IXTP4N, IXTP4, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) TO-220
***ure Electronics
MOSFET MSFT N-CH ULTRA JNCT X2 344
***ark
Mosfet, N-Ch, 650V, 4A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:4A; On Resistance Rds(On):0.85Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXTP4N65X2
DISTI # IXTP4N65X2-ND		IXYS CorporationMOSFET N-CH 650V 4A X2 TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$1.5500
IXTP4N65X2
DISTI # 02AC9842		IXYS CorporationMOSFET, N-CH, 650V, 4A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.85ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes52
  • 2500:$0.8770
  • 1000:$1.0400
  • 500:$1.2600
  • 100:$1.6300
  • 10:$2.0200
  • 1:$2.2300
IXTP4N65X2
DISTI # 747-IXTP4N65X2		IXYS CorporationMOSFET
RoHS: Compliant		63
  • 1:$2.2100
  • 10:$2.0000
  • 25:$1.7400
  • 50:$1.6300
  • 100:$1.6100
  • 250:$1.3000
  • 500:$1.2500
  • 1000:$1.0300
  • 2500:$0.8680
IXTP4N65X2
DISTI # 9171485P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 4A TO-220, TU210
  • 500:£1.0000
  • 250:£1.0580
  • 100:£1.1320
  • 25:£1.2940
IXTP4N65X2
DISTI # IXTP4N65X2		IXYS CorporationTransistor: N-MOSFET,X2-Class,unipolar,650V,4A,80W,TO220AB95
  • 50:$0.9300
  • 10:$1.0300
  • 3:$1.1600
  • 1:$1.3000
IXTP4N65X2
DISTI # 2674789		IXYS CorporationMOSFET, N-CH, 650V, 4A, TO-220
RoHS: Compliant		0
  • 500:£1.0100
  • 250:£1.0600
  • 100:£1.1500
  • 25:£1.2300
  • 5:£1.7400
IXTP4N65X2
DISTI # 2674789		IXYS CorporationMOSFET, N-CH, 650V, 4A, TO-220
RoHS: Compliant		0
  • 2500:$1.3700
  • 1000:$1.4300
  • 500:$1.5100
  • 250:$1.6000
  • 100:$1.8400
  • 25:$2.1800
  • 10:$2.6700
  • 1:$3.0600
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SN65HVD1782QDRQ1

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DF13E-30DP-1.25V(51)

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OMO.#: OMO-DF13E-30DP-1-25V-51--HIROSE

 Neu und Original
Verfügbarkeit
Aktie:
63
Auf Bestellung:
2046
Menge eingeben:
Der aktuelle Preis von IXTP4N65X2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,21 $
2,21 $
10
2,00 $
20,00 $
25
1,74 $
43,50 $
50
1,63 $
81,50 $
100
1,61 $
161,00 $
250
1,30 $
325,00 $
500
1,25 $
625,00 $
1000
1,03 $
1 030,00 $
2500
0,87 $
2 170,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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