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IXTP4N6

IXTP4N65X2 vs IXTP4N60A vs IXTP4N60P

 
PartNumberIXTP4N65X2IXTP4N60AIXTP4N60P
DescriptionMOSFET DISCMSFT NCHULTRAJNCTX2CLASSMOSFET 4.0 Amps 600 V 1.9 Ohm Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance850 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge8.3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation80 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFET-PolarHV
PackagingTube-Tube
SeriesX2-Class-IXTP4N60
BrandIXYS--
Forward Transconductance Min2.5 S--
Fall Time25 ns-20 ns
Product TypeMOSFET--
Rise Time28 ns-10 ns
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57 ns-50 ns
Typical Turn On Delay Time22 ns-25 ns
Unit Weight0.012346 oz-0.081130 oz
Package Case--TO-220-3
Number of Channels--1 Channel
Transistor Type--1 N-Channel
Pd Power Dissipation--89 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--4 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--2 Ohms
Qg Gate Charge--13 nC
Forward Transconductance Min--2.8 S
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse 		IXTP4N65X2 MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
IXTP4N60A Neu und Original
IXTP4N65X2 MOSFET N-CH 650V 4A X2 TO-220
IXTP4N60P MOSFET 4.0 Amps 600 V 1.9 Ohm Rds
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