IXFN520N075T2

IXFN520N075T2
Mfr. #:
IXFN520N075T2
Hersteller:
Littelfuse
Beschreibung:
MOSFET N-CH 75V 480A SOT227
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN520N075T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFN520N075T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFN520N075
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
SMD/SMT
Handelsname
HiPerFET
Paket-Koffer
SOT-227-4
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
940 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
35 ns
Anstiegszeit
36 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
480 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Widerstand
1.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
80 ns
Typische-Einschaltverzögerungszeit
48 ns
Qg-Gate-Ladung
545 nC
Vorwärts-Transkonduktanz-Min
65 S
Kanal-Modus
Erweiterung
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 75 V 940 W 545 nC TranchT2 HiperFET Power MosFet SMT - SOT-227
***p One Stop Global
Trans MOSFET N-CH 75V 480A 4-Pin SOT-227B
***i-Key
MOSFET N-CH 75V 480A SOT227
***ukat
N-Ch 75V 480A 940W 0,0019R SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Teil # Mfg. Beschreibung Aktie Preis
IXFN520N075T2
DISTI # V36:1790_15877726
IXYS CorporationTrans MOSFET N-CH 75V 480A 4-Pin SOT-227B
RoHS: Compliant
0
    IXFN520N075T2
    DISTI # IXFN520N075T2-ND
    IXYS CorporationMOSFET N-CH 75V 480A SOT227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    254In Stock
    • 500:$16.6980
    • 100:$19.1180
    • 30:$20.5700
    • 10:$22.3850
    • 1:$24.2000
    IXFN520N075T2
    DISTI # 747-IXFN520N075T2
    IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
    RoHS: Compliant
    389
    • 1:$24.2000
    • 5:$22.9900
    • 10:$22.3800
    • 25:$20.5700
    • 50:$19.7000
    • 100:$19.1100
    • 200:$17.5400
    IXFN520N075T2
    DISTI # IXFN520N075T2
    IXYS CorporationN-Ch 75V 480A 940W 0,0019R SOT227B
    RoHS: Compliant
    0
    • 1:€19.6500
    • 5:€16.6500
    • 10:€15.6500
    • 25:€15.0500
    IXFN520N075T2
    DISTI # XSFP00000002804
    IXYS Corporation 
    RoHS: Compliant
    20 in Stock0 on Order
    • 20:$25.4400
    • 10:$27.2600
    Bild Teil # Beschreibung
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    MOSFET 1000V 44A SOT-227 Power MOSFET
    IXFN520N075T2

    Mfr.#: IXFN520N075T2

    OMO.#: OMO-IXFN520N075T2

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    IXFN520N075T2

    Mfr.#: IXFN520N075T2

    OMO.#: OMO-IXFN520N075T2-IXYS-CORPORATION

    MOSFET N-CH 75V 480A SOT227
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    Mfr.#: IXFN52N90P

    OMO.#: OMO-IXFN52N90P-IXYS-CORPORATION

    MOSFET N-CH 900V 43A SOT227
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    Mfr.#: IXFN52N100X

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    MOSFET 1KV 44A ULTRA JCT SOT227
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IXFN520N075T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    25,05 $
    25,05 $
    10
    23,79 $
    237,95 $
    100
    22,54 $
    2 254,23 $
    500
    21,29 $
    10 645,00 $
    1000
    20,04 $
    20 037,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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