SIHG22N50D-E3

SIHG22N50D-E3
Mfr. #:
SIHG22N50D-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 500V Vds 30V Vgs TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG22N50D-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG22N50D-E3 DatasheetSIHG22N50D-E3 Datasheet (P4-P6)SIHG22N50D-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHG22N50D-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
230 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
49 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
312 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
20.82 mm
Länge:
15.87 mm
Serie:
D
Breite:
5.31 mm
Marke:
Vishay / Siliconix
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
42 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
21 ns
Teil # Aliase:
SIHG22N50D
Gewichtseinheit:
1.340411 oz
Tags
SIHG22N5, SIHG22, SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
500V, 22A, 0.23OHM, TO-247, D-SERIES MOSFET
***et
Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC
*** Europe
D SERIES MOSFET N-CHANNEL 500V
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHG22N50D-E3
DISTI # SIHG22N50D-E3-ND
Vishay SiliconixMOSFET N-CH 500V 22A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
456In Stock
  • 5000:$1.9192
  • 2500:$1.9942
  • 500:$2.4890
  • 100:$2.9238
  • 25:$3.3736
  • 10:$3.5690
  • 1:$3.9700
SIHG22N50D-E3
DISTI # SIHG22N50D-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N50D-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 2000:$1.8900
  • 500:$1.9900
  • 1000:$1.9900
SIHG22N50D-E3
DISTI # SIHG22N50D-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin TO-247AC (Alt: SIHG22N50D-E3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 500:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.7900
SIHG22N50D-E3
DISTI # 78-SIHG22N50D-E3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant
389
  • 1:$4.4000
  • 10:$3.9200
  • 100:$3.2200
  • 250:$2.9000
  • 500:$2.6000
  • 1000:$2.1900
  • 2500:$1.9000
Bild Teil # Beschreibung
AUIRS2113STR

Mfr.#: AUIRS2113STR

OMO.#: OMO-AUIRS2113STR

Gate Drivers HI LO SIDE DRVR 2-Ch 600V 140ns
ICL7667CBAZA

Mfr.#: ICL7667CBAZA

OMO.#: OMO-ICL7667CBAZA

Gate Drivers W/ANNEAL DL PWR MOS DRVR COM
BC817-16LT3G

Mfr.#: BC817-16LT3G

OMO.#: OMO-BC817-16LT3G

Bipolar Transistors - BJT 500mA 50V NPN
BAV70LT1G

Mfr.#: BAV70LT1G

OMO.#: OMO-BAV70LT1G

Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
MURS160T3G

Mfr.#: MURS160T3G

OMO.#: OMO-MURS160T3G

Rectifiers 600V 1A Ultrafast
TL431IPK

Mfr.#: TL431IPK

OMO.#: OMO-TL431IPK

Voltage References Adj Shunt
IRF530NPBF

Mfr.#: IRF530NPBF

OMO.#: OMO-IRF530NPBF

MOSFET MOSFT 100V 17A 90mOhm 24.7nC
IRFB31N20DPBF

Mfr.#: IRFB31N20DPBF

OMO.#: OMO-IRFB31N20DPBF

MOSFET MOSFT 200V 31A 82mOhm 70nC
M80-8880605

Mfr.#: M80-8880605

OMO.#: OMO-M80-8880605

Headers & Wire Housings 3+3 POS DIL FEMALE 24-28 AWG
ICL7667CBAZA

Mfr.#: ICL7667CBAZA

OMO.#: OMO-ICL7667CBAZA-INTERSIL

Gate Drivers W/ANNEAL DL PWR MOS DRVR COM
Verfügbarkeit
Aktie:
389
Auf Bestellung:
2372
Menge eingeben:
Der aktuelle Preis von SIHG22N50D-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,40 $
4,40 $
10
3,92 $
39,20 $
100
3,22 $
322,00 $
250
2,90 $
725,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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