BSC150N03LDGATMA1

Mfr. #:: BSC150N03LDGATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC150N03LDGATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BSC150N03LDGATMA1 Datasheet BSC150N03LDGATMA1 Datasheet (P4-P6)BSC150N03LDGATMA1 Datasheet (P7-P9)BSC150N03LDGATMA1 Datasheet (P10)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 20 A

Rds On - Drain-Source-Widerstand:: 12.5 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 13.2 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 26 W

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.27 mm

Länge:: 5.9 mm

Serie:: OptiMOS 3

Transistortyp:: 2 N-Channel

Breite:: 5.15 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 18 S

Abfallzeit:: 2 ns

Produktart:: MOSFET

Anstiegszeit:: 2.2 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 12 ns

Typische Einschaltverzögerungszeit:: 2.7 ns

Teil # Aliase:: BSC150N03LD BSC15N3LDGXT G SP000359362

Gewichtseinheit:: 0.005432 oz

Tags: BSC150N03LDG, BSC150, BSC15, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC150N03LDGATMA1 Beschreibung

***ure Electronics: Dual N-Channel 30 V 15 mOhm 13.2 nC OptiMOS Power Mosfet - TDSON-8

***et: Transistor MOSFET Array Dual N-CH 30V 20A 8-Pin TDSON T/R

***ment14 APAC: MOSFET, N CH, 20A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:26W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***th Star Micro: Transistor MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R

***ure Electronics: SI4425BDY Series 30 V 0.012 Ohm 100 nC P-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, P Channel, -30V, 0.01Ohm, -8.8A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount Rohs Compliant: No

***nell: MOSFET, P REEL 2500; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:8.8A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:50A; No. of Pins:8; P Channel Gate Charge:64nC; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.012ohm; Resistance, Rds on @ Vgs = 4.5V:0.019ohm; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm

***ical: Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 T/R

***ser: N-Channel MOSFETs 30V 14A 0.011Ohm

***S: French Electronic Distributor since 1988

***ure Electronics: N-Channel 30 V 11.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ

***Yang: Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***nell: MOSFET, N CH, 30V, 0.0082OHM, 9A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.47W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***ure Electronics: Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V

***ment14 APAC: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS

***nell: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ical: Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 EP T/R

*** Electronics: MOSFET 30V 14A 3.7W 11mohm @ 10V

***S: French Electronic Distributor since 1988

***et: Trans MOSFET N-CH 30V 9A 8-Pin DSO

***S: French Electronic Distributor since 1988

***el Electronic: Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC150N03LDGATMA1 DISTI # V72:2272_06384773	Infineon Technologies AG	Trans MOSFET N-CH 30V 8A 8-Pin TDSON EP T/R RoHS: Compliant	4533	75000:$0.2867 30000:$0.2910 15000:$0.2952 6000:$0.2995 3000:$0.3328 1000:$0.3687 500:$0.4506 250:$0.5014 100:$0.5072 50:$0.6244 25:$0.6322 10:$0.6402 1:$0.7260
BSC150N03LDGATMA1 DISTI # BSC150N03LDGATMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19228In Stock	1000:$0.4815 500:$0.6099 100:$0.7864 10:$0.9950 1:$1.1200
BSC150N03LDGATMA1 DISTI # BSC150N03LDGATMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19228In Stock	1000:$0.4815 500:$0.6099 100:$0.7864 10:$0.9950 1:$1.1200
BSC150N03LDGATMA1 DISTI # BSC150N03LDGATMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	15000In Stock	5000:$0.4145
BSC150N03LDGATMA1 DISTI # 29028563	Infineon Technologies AG	Trans MOSFET N-CH 30V 8A 8-Pin TDSON EP T/R RoHS: Compliant	4533	3000:$0.3328 1000:$0.3839 500:$0.4683 250:$0.5207 100:$0.5266 50:$0.6469 25:$0.6550 21:$0.6633
BSC150N03LDGATMA1 DISTI # BSC150N03LDGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 8A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC150N03LDGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3259 10000:$0.3139 20000:$0.3029 30000:$0.2929 50000:$0.2869
BSC150N03LDGATMA1 DISTI # 60R2516	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 20A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	7856	1:$0.9300 10:$0.7940 100:$0.6100 500:$0.5390 1000:$0.4250
BSC150N03LD G DISTI # 726-BSC150N03LDG	Infineon Technologies AG	MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 RoHS: Compliant	8109	1:$0.9300 10:$0.7940 100:$0.6100 500:$0.5390 1000:$0.4250 5000:$0.3770 10000:$0.3630
BSC150N03LDGATMA1 DISTI # 726-BSC150N03LDGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 RoHS: Compliant	5000	1:$0.9300 10:$0.7940 100:$0.6100 500:$0.5390 1000:$0.4250 5000:$0.3770
BSC150N03LDGATMA1	Infineon Technologies AG	Dual N-Channel 30 V 15 mOhm 13.2 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	10000Reel	5000:$0.3500
BSC150N03LDGATMA1 DISTI # 7545314P	Infineon Technologies AG	MOSFET DUAL N-CH 30V 8A OPTIMOS3 TDSON8, RL	4950	50:£0.5120 100:£0.4700 250:£0.4420 500:£0.4300
BSC150N03LDGATMA1 DISTI # 1775471	Infineon Technologies AG	MOSFET, N CH, 20A, 30V, PG-TDSON-8 RoHS: Compliant	7856	1:$1.4700 10:$1.2600 100:$0.9650 500:$0.8530 1000:$0.6720 5000:$0.6090
BSC150N03LDGATMA1 DISTI # C1S322000676103	Infineon Technologies AG	MOSFETs RoHS: Compliant	4533	100:$0.5072 50:$0.6244 25:$0.6322 10:$0.6402
BSC150N03LDGATMA1 DISTI # 1775471	Infineon Technologies AG	MOSFET, N CH, 20A, 30V, PG-TDSON-8 RoHS: Compliant	7856	5:£0.6320 25:£0.5170 100:£0.4670 250:£0.4460 500:£0.4120

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	Mfr.#: STM32L432KCU6 OMO.#: OMO-STM32L432KCU6-STMICROELECTRONICS	Microcontrollers - MCU ARM Microcontrollers - MCU Ultra-low-power with FPU ARM Cortex-M4 MCU 80 MHz with 256 Kbytes Flash, USB
	Mfr.#: IPN70R750P7SATMA1 OMO.#: OMO-IPN70R750P7SATMA1-INFINEON-TECHNOLOGIES	COOLMOS P7 700V SOT-223
	Mfr.#: CRCW0805330RFKEAC OMO.#: OMO-CRCW0805330RFKEAC-VISHAY-DALE	D12/CRCW0805-C 100 330R 1% ET1
	Mfr.#: CRCW0603383KFKEAC OMO.#: OMO-CRCW0603383KFKEAC-VISHAY-DALE	D11/CRCW0603-C 100 383K 1% ET1
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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von BSC150N03LDGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,88 $~~; ~~0,88 $~~

10: ~~0,75 $~~; ~~7,53 $~~

100: ~~0,58 $~~; ~~57,80 $~~

500: ~~0,51 $~~; ~~255,50 $~~

1000: ~~0,40 $~~; ~~403,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC150N03LDGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes