 | |  | |
| PartNumber | BSC150N03LD G | BSC150N03LDGATMA1 | BSC152N10NSFGATMA1 |
| Description | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | MOSFET N-CH 100V 63A TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 12.5 mOhms | 12.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 13.2 nC | 13.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 26 W | 26 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Product | MOSFET Small Signal | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 18 S | 18 S | - |
| Fall Time | 2 ns | 2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.2 ns | 2.2 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12 ns | 12 ns | - |
| Typical Turn On Delay Time | 2.7 ns | 2.7 ns | - |
| Part # Aliases | BSC150N03LDGATMA1 BSC15N3LDGXT SP000359362 | BSC150N03LD BSC15N3LDGXT G SP000359362 | - |
| Unit Weight | 0.003527 oz | 0.005432 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC150N03LD G | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | |
| BSC150N03LDGATMA1 | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | ||
| BSC155N06NDATMA1 | MOSFET TRENCH 40<-<100V | ||
| BSC150N03LDGATMA1 | MOSFET 2N-CH 30V 8A 8TDSON | ||
| BSC152N10NSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
| BSC159N10LSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
| BSC150N03LD | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC150N03LD G | Trans MOSFET N-CH 30V 8A 8-Pin TDSON T/R (Alt: BSC150N03LD G) | ||
| BSC150N03LD G 30V,20A, | Neu und Original | ||
| BSC150N03LD G 30V20A | Neu und Original | ||
| BSC150N03LDG | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC150N03LDG PB-FREE | Neu und Original | ||
| BSC152N10NSF G | MOSFET N-Ch 100V 9.4A TDSON-8 | ||
| BSC152N10NSFG | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC159N10LSF | Neu und Original | ||
| BSC159N10LSFG | Neu und Original | ||
| BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 |