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BSC159N10LSF G

BSC159N10LSF G
Mfr. #:
BSC159N10LSF G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC159N10LSF G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
9.4 A
Rds On - Drain-Source-Widerstand:
15.9 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
114 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 2
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
BSC159N10LSFGATMA1 BSC159N1LSFGXT SP000379614
Gewichtseinheit:
0.004974 oz
Tags
BSC159N10LSFG, BSC159, BSC15, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 15.9 mOhm 26 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ineon SCT
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***ark
TUBE / Automotive MOSFET 55V, 64A, 14 mOhm, 54 nC Qg, TO-220
***nell
MOSFET, AUTO, N-CH, 55V, TO220AB3; Transistor Polarity: N Channel; Continuous Drain Current Id: 69A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ineon SCT
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 55V 51A HEXFET TO220AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET,N CH,55V,51A,TO220AB; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:80W; Voltage Vgs Max:20V
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET, N CH, 40V, 75A, TO220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Power Dissipation Pd:140W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
NTP6411ANG N-channel MOSFET Transistor; 77 A; 100 V; 3-Pin TO-220
***emi
Power MOSFET 100V 77A 14 mOhm Single N-Channel TO-220
***et
Trans MOSFET N-CH 100V 77A 3-Pin(3+Tab) TO-220AB Rail
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0127ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:188W ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
NTP5864NG N-channel MOSFET Transistor; 63 A; 60 V; 3-Pin TO-220
***et
Trans MOSFET N-CH 60V 63A 3-Pin(3+Tab) TO-220AB Rail
***ponent Stockers USA
63 A 60 V 0.0124 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***emi
Power MOSFET 60V, 63A, 12.4mΩ G
*** Stop Electro
Power Field-Effect Transistor, 63A I(D), 60V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 60V, 63A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:63A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:- RoHS Compliant: Yes
***nell
MOSFET, N-CH, 60V, 63A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 107W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
***ark
MOSFET Transistor, N Channel, 40 A, 100 V, 12 mohm, 10 V, 3 V RoHS Compliant: Yes
***icroelectronics
N-Channel 100V - 0.012Ohm - 80A - TO-220FP LOW GATE CHARGE STripFET(TM) POWER MOSFET
***ure Electronics
N-Channel 100 V 15 mO Flange Mount STripFET™ II Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220FP Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 45 W
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 80A UltraFET II TO220FP
***nell
MOSFET, N CH, 100V, 38A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
***r Electronics
Power Field-Effect Transistor, 38A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
BSC159N10LSFGATMA1
DISTI # BSC159N10LSFGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 63A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$1.0951
BSC159N10LSFGATMA1
DISTI # BSC159N10LSFGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 63A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    BSC159N10LSFGATMA1
    DISTI # BSC159N10LSFGATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V 63A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      BSC159N10LSFGATMA1
      DISTI # BSC159N10LSFGATMA1      		Infineon Technologies AGTrans MOSFET N-CH 100V 9.4A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC159N10LSFGATMA1)
      RoHS: Compliant
      Min Qty: 5000
      Container: Reel      		Americas - 0
      • 5000:$1.1029
      • 10000:$1.0629
      • 20000:$1.0249
      • 30000:$0.9899
      • 50000:$0.9729
      BSC159N10LSFGATMA1
      DISTI # SP000379614      		Infineon Technologies AGTrans MOSFET N-CH 100V 9.4A 8-Pin TDSON T/R (Alt: SP000379614)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel      		Europe - 0
      • 5000:€1.2489
      • 10000:€1.0409
      • 20000:€0.9609
      • 30000:€0.8919
      • 50000:€0.8329
      BSC159N10LSF G
      DISTI # 60R2518      		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 63A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0122ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V RoHS Compliant: Yes0
      • 1000:$1.1100
      • 500:$1.3400
      • 100:$1.5300
      • 10:$1.9100
      • 1:$2.2500
      BSC159N10LSF G
      DISTI # 726-BSC159N10LSFG      		Infineon Technologies AGMOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
      RoHS: Compliant      		0
        BSC159N10LSFGATMA1
        DISTI # N/A        		Infineon Technologies AGMOSFET MV POWER MOS0
          BSC159N10LSF G
          DISTI # 1775473          		Infineon Technologies AGMOSFET, N CH, 63A, 100V, PG-TDSON-8
          RoHS: Compliant          		0
          • 500:£1.0400
          • 250:£1.1200
          • 100:£1.1900
          • 10:£1.5000
          • 1:£1.9800
          BSC159N10LSF G
          DISTI # 1775473          		Infineon Technologies AGMOSFET, N CH, 63A, 100V, PG-TDSON-8
          RoHS: Compliant          		0
          • 5000:$1.6800
          • 1000:$1.6900
          • 500:$2.0300
          • 100:$2.3200
          • 10:$2.8900
          • 1:$3.4100
          Bild Teil # Beschreibung
          BSC159N10LSF G

          Mfr.#: BSC159N10LSF G

          OMO.#: OMO-BSC159N10LSF-G

          		 MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
          BSC159N10LSF

          Mfr.#: BSC159N10LSF

          OMO.#: OMO-BSC159N10LSF-1190

          		 Neu und Original
          BSC159N10LSFG

          Mfr.#: BSC159N10LSFG

          OMO.#: OMO-BSC159N10LSFG-1190

          		 Neu und Original
          BSC159N10LSFGATMA1

          Mfr.#: BSC159N10LSFGATMA1

          OMO.#: OMO-BSC159N10LSFGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 100V 63A TDSON-8
          BSC159N10LSF G

          Mfr.#: BSC159N10LSF G

          OMO.#: OMO-BSC159N10LSF-G-128

          		 MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4000
          Menge eingeben:
          Der aktuelle Preis von BSC159N10LSF G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          2,25 $
          2,25 $
          10
          1,91 $
          19,10 $
          100
          1,53 $
          153,00 $
          500
          1,34 $
          670,00 $
          1000
          1,11 $
          1 110,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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