 |  | | |
| PartNumber | BSC159N10LSF G | BSC159N10LSF | BSC159N10LSFG |
| Description | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 9.4 A | - | - |
| Rds On Drain Source Resistance | 15.9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 114 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | BSC159N10LSFGATMA1 BSC159N1LSFGXT SP000379614 | - | - |
| Unit Weight | 0.004974 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | |
| BSC159N10LSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
| BSC159N10LSF | Neu und Original | ||
| BSC159N10LSFG | Neu und Original | ||
| BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 |