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IPB038N12N3GATMA1

IPB038N12N3GATMA1
Mfr. #:
IPB038N12N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB038N12N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
120 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
3.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
211 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
83 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
52 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
G IPB038N12N3 IPB38N12N3GXT SP000694160
Gewichtseinheit:
0.139332 oz
Tags
IPB038, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 120V, 120A, TO263-3; Transistor Polarity:N Channel; Continuous Dra
***ied Electronics & Automation
IPB038N12N3 G; N-channel MOSFET Transistor; 120 A 120 V; 3-Pin PG-TO-263-3
***ure Electronics
Single N-Channel 120 V 3.8 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO263-3, RoHS
***nell
MOSFET, N-CH, 120V, 120A, TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Teil # Mfg. Beschreibung Aktie Preis
IPB038N12N3GATMA1
DISTI # V36:1790_06377059		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$3.0670
  • 500000:$3.0700
  • 100000:$3.2890
  • 10000:$3.6590
  • 1000:$3.7200
IPB038N12N3GATMA1
DISTI # V72:2272_06377059		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB038N12N3GATMA1
    DISTI # IPB038N12N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 120V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		580In Stock
    • 500:$3.7864
    • 100:$4.4479
    • 10:$5.4290
    • 1:$6.0400
    IPB038N12N3GATMA1
    DISTI # IPB038N12N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 120V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		580In Stock
    • 500:$3.7864
    • 100:$4.4479
    • 10:$5.4290
    • 1:$6.0400
    IPB038N12N3GATMA1
    DISTI # IPB038N12N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 120V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2000:$2.9454
    • 1000:$3.1004
    IPB038N12N3GATMA1
    DISTI # IPB038N12N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB038N12N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$2.5900
    • 6000:$2.6900
    • 4000:$2.7900
    • 2000:$2.8900
    • 1000:$2.9900
    IPB038N12N3GATMA1
    DISTI # SP000694160    		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000694160)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 10000:€2.1900
    • 6000:€2.3900
    • 4000:€2.5900
    • 2000:€2.6900
    • 1000:€2.7900
    IPB038N12N3GATMA1
    DISTI # 47W3464    		Infineon Technologies AGMOSFET, N CHANNEL, 120V, 120A, TO263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$3.5400
    • 250:$3.9400
    • 100:$4.1500
    • 50:$4.3600
    • 25:$4.5800
    • 10:$4.7900
    • 1:$5.6400
    IPB038N12N3 G
    DISTI # 726-IPB038N12N3GXT    		Infineon Technologies AGMOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		342
    • 1:$5.5800
    • 10:$4.7400
    • 100:$4.1100
    • 250:$3.9000
    • 500:$3.5000
    • 1000:$2.9500
    IPB038N12N3GATMA1
    DISTI # 726-IPB038N12N3GATMA    		Infineon Technologies AGMOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		264
    • 1:$5.5800
    • 10:$4.7400
    • 100:$4.1100
    • 250:$3.9000
    • 500:$3.5000
    • 1000:$2.9500
    • 2000:$2.8000
    IPB038N12N3GATMA1
    DISTI # 2212825    		Infineon Technologies AGMOSFET, N-CH, 120V, 120A, TO263-3
    RoHS: Compliant    		16
    • 1000:$4.4500
    • 500:$5.2700
    • 250:$5.8800
    • 100:$6.1900
    • 10:$7.1400
    • 1:$8.4100
    IPB038N12N3GATMA1
    DISTI # 2212825    		Infineon Technologies AGMOSFET, N-CH, 120V, 120A, TO263-30
    • 500:£2.7200
    • 250:£3.0400
    • 100:£3.2000
    • 10:£3.6900
    • 1:£4.8000
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    Verfügbarkeit
    Aktie:
    99
    Auf Bestellung:
    2082
    Menge eingeben:
    Der aktuelle Preis von IPB038N12N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,58 $
    5,58 $
    10
    4,74 $
    47,40 $
    100
    4,11 $
    411,00 $
    250
    3,90 $
    975,00 $
    500
    3,50 $
    1 750,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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