IPB038

IPB038N12N3 G vs IPB038N12N3G vs IPB038N12N3G 038N12N

 
PartNumberIPB038N12N3 GIPB038N12N3GIPB038N12N3G 038N12N
DescriptionMOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3MOSFET, N-CH, 120V, 120A, TO263-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance3.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge211 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min83 S--
Fall Time21 ns--
Product TypeMOSFET--
Rise Time52 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time35 ns--
Part # AliasesIPB038N12N3GATMA1 IPB38N12N3GXT SP000694160--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPB038N12N3GATMA1 MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IPB038N12N3 G MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IPB038N12N3GATMA1 MOSFET N-CH 120V 120A TO263-3
IPB038N12N3 G Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263
IPB038N12N3G MOSFET, N-CH, 120V, 120A, TO263-3
IPB038N12N3G 038N12N Neu und Original
IPB038N12N3G , 2SD1858TV Neu und Original
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