IRFH7004TRPBF

Mfr. #:: IRFH7004TRPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFH7004TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFH7004TRPBF Datasheet IRFH7004TRPBF Datasheet (P4-P6)IRFH7004TRPBF Datasheet (P7-P9)IRFH7004TRPBF Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:: IRFH7004TRPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PQFN-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 259 A

Rds On - Drain-Source-Widerstand:: 1.1 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 3 V

Qg - Gate-Ladung:: 129 nC

Pd - Verlustleistung:: 156 W

Aufbau:: Single

Handelsname:: StarkIRFET

Verpackung:: Spule

Höhe:: 0.83 mm

Länge:: 6 mm

Transistortyp:: 1 N-Channel

Breite:: 5 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 117 S

Abfallzeit:: 49 ns

Produktart:: MOSFET

Anstiegszeit:: 51 ns

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 73 ns

Typische Einschaltverzögerungszeit:: 15 ns

Teil # Aliase:: SP001570954

Gewichtseinheit:: 0.001164 oz

Tags: IRFH7004TRP, IRFH7004T, IRFH700, IRFH70, IRFH7, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH7004TRPBF Beschreibung

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***ure Electronics: Single N-Channel 40 V 1.4 mOhm 129 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***Yang: Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R - Tape and Reel

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 156 W

***nell: MOSFET, N-CH, 40V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***ure Electronics: Single N-Channel 40 V 2.6 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***(Formerly Allied Electronics): MOSFET, N-Channel, 40V, 100A, 2.6 mOhm,73 nC Qg, PQFN

***Yang: Trans MOSFET N-CH 40V 28A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ernational Rectifier: 40V Single N-Channel HEXFET Power MOSFET in a PQFN package

***et Europe: Trans MOSFET N-CH 40V 24A 8-Pin PQFN T/R

***ment14 APAC: MOSFET,N CH,40V,24A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:3.6W; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 30V 22A 8-Pin PQFN T/R - Tape and Reel

***nell: MOSFET, N-CH, 30V, 79A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 6.6 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 46

IRFH7004TRPBF Mehr Informationen

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFH7004TRPBF DISTI # V72:2272_13889917	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R	4000	3000:$0.6417 1000:$0.7130 500:$0.8398 250:$0.9482 100:$0.9587 25:$1.1505 10:$1.1641 1:$1.3243
IRFH7004TRPBF DISTI # IRFH7004TRPBFTR-ND	Infineon Technologies AG	MOSFET N CH 40V 100A PQFN 5X6 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.8261
IRFH7004TRPBF DISTI # IRFH7004TRPBFCT-ND	Infineon Technologies AG	MOSFET N CH 40V 100A PQFN 5X6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9139 500:$1.1030 100:$1.4182 10:$1.7650 1:$1.9500
IRFH7004TRPBF DISTI # IRFH7004TRPBFDKR-ND	Infineon Technologies AG	MOSFET N CH 40V 100A PQFN 5X6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9139 500:$1.1030 100:$1.4182 10:$1.7650 1:$1.9500
IRFH7004TRPBF DISTI # 30726613	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R	8000	4000:$0.6171
IRFH7004TRPBF DISTI # 30737916	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R	4000	3000:$0.6417 1000:$0.7130 500:$0.8398 250:$0.9482 100:$0.9587 25:$1.1505 11:$1.1641
IRFH7004TRPBF DISTI # 26295223	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R	3792	2500:$0.6680 1000:$0.6876 500:$0.7085 250:$0.7306 100:$0.7542 16:$0.7793
IRFH7004TRPBF DISTI # IRFH7004TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: IRFH7004TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 20000	4000:$0.5490 8000:$0.5264 12000:$0.5193 20000:$0.4991 40000:$0.4927 100000:$0.4804 200000:$0.4687
IRFH7004TRPBF DISTI # IRFH7004TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7004TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.6409 8000:$0.6179 16000:$0.5949 24000:$0.5749 40000:$0.5649
IRFH7004TRPBF DISTI # IRFH7004TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: IRFH7004TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€1.1999 8000:€0.9359 16000:€0.8359 24000:€0.7609 40000:€0.7129
IRFH7004TRPBF DISTI # SP001570954	Infineon Technologies AG	Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: SP001570954) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€1.0989 8000:€0.8579 16000:€0.7659 24000:€0.6969 40000:€0.6529
IRFH7004TRPBF DISTI # 55W4108	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V RoHS Compliant: Yes	3635	1:$1.6400 10:$1.4000 100:$1.1200 500:$0.9740 1000:$0.8070
IRFH7004TRPBF. DISTI # 29AC7044	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:156W,No. of Pins:5Pins RoHS Compliant: Yes	0
IRFH7004TRPBF DISTI # 70394764	Infineon Technologies AG	IRFH7004TRPBF N-channel MOSFET Transistor,100 A,40 V,8-Pin PQFN RoHS: Compliant	0	4000:$2.2050
IRFH7004TRPBF DISTI # 942-IRFH7004TRPBF	Infineon Technologies AG	MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC RoHS: Compliant	215	1:$1.6400 10:$1.4000 100:$1.1200 500:$0.9740 1000:$0.8070 4000:$0.7240 8000:$0.6960
IRFH7004TRPBF	Infineon Technologies AG	Single N-Channel 40 V 1.4 mOhm 129 nC HEXFET Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant	50Cut Tape/Mini-Reel	1:$0.8950 100:$0.7950 250:$0.7800 500:$0.7650 1500:$0.7300
IRFH7004TRPBF DISTI # 7769157P	Infineon Technologies AG	STRONGIRFETMOSFET N-CH 40V 100A PQFN8EP, RL	3965	40:£0.8900 200:£0.7900 1000:£0.6000 2000:£0.5800
IRFH7004TRPBF DISTI # 2253782	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, PQFN RoHS: Compliant	3630	5:£1.1800 25:£0.9080 100:£0.8060 250:£0.7790 500:£0.7520
IRFH7004TRPBF DISTI # 2253782	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, PQFN RoHS: Compliant	3635	1:$2.6000 10:$2.2200 100:$1.7800 500:$1.5500 1000:$1.2900 4000:$1.2900
IRFH7004TRPBF DISTI # C1S322000571172	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R RoHS: Compliant	8000	4000:$0.7780

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1991
Menge eingeben:

Der aktuelle Preis von IRFH7004TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,52 $~~; ~~1,52 $~~

10: ~~1,29 $~~; ~~12,90 $~~

100: ~~1,03 $~~; ~~103,00 $~~

500: ~~0,91 $~~; ~~454,00 $~~

1000: ~~0,75 $~~; ~~753,00 $~~

2000: ~~0,70 $~~; ~~1 402,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IRFH7004TRP 3
IRFH7004T 5
IRFH700 6
IRFH70 10
IRFH7 62
IRFH 278
IRF 8615

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IRFH7004TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes